Optics (physics.optics)

Abstract: The coupled nonlinear Schroedinger equations for paraxial optics with two circular light polarizations, in a defocusing Kerr medium with anomalous dispersion, coincide in form with the Gross-Pitaevskii equations for a binary Bose-Einstein condensate of cold atoms in the phase separation regime. A helical symmetry of optical waveguide corresponds to rotation of transverse potential confining the condensate. The ``centrifugal force'' makes essential effect on propagation of light wave in such system. Numerical simulations for a waveguide of elliptical cross-section revealed previously unknown in optics, specific structures consisting of quantized vortices and domain walls between two polarizations.

Abstract: High-quality low-dimensional layered and van der Waals materials are typically exfoliated, with sample cross sectional areas on the order of tens to hundreds of microns. The small size of flakes makes the experimental characterization of their dielectric properties unsuitable with conventional spectroscopic ellipsometry, due to beam-sample size mismatch and non-uniformities of the crystal axes. Previously, the experimental measurement of the dielectrirc permittivity of such microcrystals was carried out with near-field tip-based scanning probes. These measurements are sensitive to external conditions like vibrations and temperature, and require non-deterministic numerical fitting to some a priori known model. We present an alternative method to extract the in-plane dielectric permittivity of van der Waals microcrystals, based on identifying reflectance minima in spectroscopic measurements. Our method does not require complex fitting algorithms nor near field tip-based measurements and accommodates for small-area samples. We demonstrate the robustness of our method using hexagonal boron nitride and {\alpha}-MoO3, and recover their dielectric permittivities that are close to literature values.

Abstract: Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide-based phase change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid-state structural phases. Although significant efforts have been devoted to accurate simulation of PCM-based devices, in this paper, we highlight three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid-phase PCMs. We further investigated the important topic of switching energy scaling in PCM devices, which also helps explain why the three above-mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics. Our findings offer insight to facilitate accurate modeling of PCM-based photonic devices and can inform the development of more efficient reconfigurable optics.

Abstract: Despite numerous applications of two-dimensional plasmons for electromagnetic energy manipulation at the nanoscale, their quantitative refraction and reflection laws (analogs of Fresnel formulas in optics) have not yet been established. This fact can be traced down to the strong non-locality of equations governing the 2d plasmon propagation. Here, we tackle this difficulty by direct solution of plasmon scattering problem with Wiener-Hopf technique. We obtain the reflection and transmission coefficients for 2d plasmons at the discontinuity of 2d conductivity at arbitrary incidence angle, for both gated and non-gated 2d systems. At a certain incidence angle, the absolute reflectivity has a pronounced dip reaching zero for gated plasmons. The dip is associated with wave passage causing no dynamic charge accumulation at the boundary. For all incidence angles, the reflection has a non-trivial phase different from zero and $\pi$.

Abstract: Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently, programmable silicon photonics has also found new applications in quantum2 and classical 3 information processing. A key component of programmable silicon photonic integrated circuits (PICs) is the phase shifter, traditionally realized via the thermo-optic or plasma dispersion effect which are weak, volatile, and power hungry. A non-volatile phase shifter can circumvent these limitations by requiring zero power to maintain the switched phases. Previously non-volatile phase modulation was achieved via phase-change4 or ferroelectric materials5, but the switching energy remains high (pico to nano joules) and the speed is slow (micro to milli seconds). Here, we report a non-volatile III-V-on-silicon photonic phase shifter based on HfO2 memristor with sub-pJ switching energy (~400fJ), representing over an order of magnitude improvement in energy efficiency compared to the state of the art. The non-volatile phase shifter can be switched reversibly using a single 100ns pulse and exhibits an excellent endurance over 800 cycles. This technology can enable future energy-efficient programmable PICs for data centers, optical neural networks, and quantum information processing.