Optics (physics.optics)

Abstract: We experimentally present a random phase feedback based on quantum noise to generate a chaotic laser with Gaussian invariant distribution. The quantum noise from vacuum fluctuations is acquired by balanced homodyne detection and injected into a phase modulator to form a random phase feedback. An optical switch using high-speed intensity modulator is employed to reset the chaotic states repeatedly and the time evolutions of intensity statistical distributions of the chaotic states stemming from the initial noise are measured. By the quantum-noise random phase feedback, the transient intensity distributions of the chaotic outputs are improved from asymmetric invariant distributions to Gaussian invariant distributions, and the Gaussian invariant distribution indicates a randomly perturbed dynamical transition from microscopic initial noise to macroscopic stochastic fluctuation. The effects of phase feedback bandwidth and modulation depth on the invariant distributions are investigated experimentally. The chaotic time-delay signature and mean permutation entropy are suppressed to 0.036 and enhanced to 0.999 using the random phase feedback, respectively. The high-quality chaotic laser with Gaussian invariant distribution can be a desired random source for ultrafast random number generation and secure communication.

Abstract: Diamond is generally considered to have high thermal conductivity, so little attention has been paid to the laser heating effects at low excitation power. However, defects during the growth process can result in a great degradation of thermal conductivity, especially at low temperatures. Here, we observed the dynamic redshift and broadening of zero phonon line (ZPL) of silicon-vacancy (SiV) centers in diamondin the experiment. Utilizing the intrinsic temperature response of the fine structure spectra of SiV as a probe, we confirmed that the laser heating effect appears and the temperature rising results from high defect concentration. By simulating the thermal diffusion process, we have estimated the thermal conductivity of around 1 W/(mK) at the local site, which is a two order magnitude lower than that of single-crystal diamond. Our results provide a feasible scheme for characterizing the laser heating effect of diamond at low temperatures.

Abstract: The ability to amplify optical signals is of paramount importance in photonic integrated circuits (PICs). Recently, lithium niobate on insulator (LNOI) has attracted increasing interests as an emerging PIC platform. However, the shortage of active devices on LNOI platform limits the development of optical amplification. Here, we firstly report an efficient waveguide amplifier based on erbium and ytterbium co-doped LNOI by using electron beam lithography and inductively coupled plasma reactive ion etching process. We have demonstrated that the net internal gain in the communication band is 15.70 dB/cm under the pumping of 974 nm continuous laser. Benefiting from the efficient pumping facilitated by energy transfer between ytterbium and erbium ions, signal amplification can be achieved at a low pump power of 0.1 mW. It is currently the most efficient waveguide amplifier under unidirectional pumping reported on the LNOI platform, with an internal conversion efficiency of 10%. This work proposes a new and efficient active device for LNOI integrated optical systems, which may become an important fundamental component of future lithium niobate photonic integration platforms.

Abstract: We demonstrate an injection-seeded thin-disk Yb:YAG laser at 1030 nm, stabilized by the Pound-Drever-Hall (PDH) method. We modified the PDH scheme to obtain an error signal free from Trojan locking points, which allowed robust re-locking of the laser and reliable long-term operation. The single-frequency pulses have 50 mJ energy (limited to avoid laser-induced damage) with a beam quality of $\text{M}^2$ < 1.1 and an adjustable length of 55-110 ns. Heterodyne measurements confirmed a spectral linewidth of 3.7 MHz. The short pulse build-up time (850 ns) makes this laser suitable for laser spectroscopy of muonic hydrogen, pursued by the CREMA collaboration.

Abstract: The strength of electrostatic interactions (EI) between electrons and holes within semiconductor nanocrystals profoundly impact the performance of their optoelectronic systems, and different optoelectronic devices demand distinct EI strength of the active medium. However, achieving a broad range, fine-tuning of the EI strength for specific optoelectronic applications is a daunting challenge, especially in quasi 2-dimensional core-shell semiconductor nanoplatelets (NPLs), as the epitaxial growth of the inorganic shell along the direction of the thickness that solely contributes to the quantum confined effect significantly undermines the strength of the EI. Herein we propose and demonstrate a novel doubly-gradient (DG) core-shell architecture of semiconductor NPLs for on-demand tailoring of the EI strength by controlling the localized exciton concentration via in-plane architectural modulation, demonstrated by a wide tuning of radiative recombination rate and exciton binding energy. Moreover, these exciton-concentration-engineered DG NPLs also exhibit a near-unity quantum yield, remarkable thermal and photo stability, as well as considerably suppressed self-absorption. As proof-of-concept demonstrations, highly efficient color converters and high-performance light-emitting diodes (external quantum efficiency: 16.9%, maximum luminance: 43,000 cd/m2) have been achieved based on the DG NPLs. This work thus opens up new avenues for developing high-performance colloidal optoelectronic device applications.

Abstract: The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform has garnered increasing interest as an alternative, because of its several beneficial properties over the SOI platform, such as low optical losses, high thermo-optic stability, broader wavelength transparency range, and high tolerance to fabrication-process variations. However, SiN-on-SiO$_2$ based active devices, such as modulators, are scarce and lack in desired performance due to the absence of free-carrier-based activity in the SiN material and the complexity of integrating other active materials with SiN-on-SiO$_2$ platform. This shortcoming hinders the SiN-on-SiO$_2$ platform for realizing active PICs. To address this shortcoming, in this article, we demonstrate a SiN-on-SiO$_2$ microring resonator (MRR) based active modulator. Our designed MRR modulator employs an Indium-Tin-Oxide (ITO)-SiO$_2$-ITO thin-film stack as the active upper cladding and leverages the free-carrier assisted, high-amplitude refractive index change in the ITO films to affect a large electro-refractive optical modulation in the device. Based on the electrostatic, transient, and finite difference time domain (FDTD) simulations, conducted using photonics foundry-validated tools, we show that our modulator achieves 450 pm/V resonance modulation efficiency, $\sim$46.2 GHz 3-dB modulation bandwidth, 18 nm free-spectral range (FSR), 0.24 dB insertion loss, and 8.2 dB extinction ratio for optical on-off-keying (OOK) modulation at 30 Gb/s.