Optics (physics.optics)

Abstract: Deep neural networks usually process information through multiple hidden layers. However, most hardware reservoir computing recurrent networks only have one hidden reservoir layer, which significantly limits the capability of solving real-world complex tasks. Here we show a deep photonic reservoir computing (PRC) architecture, which is constructed by cascading injection-locked semiconductor lasers. In particular, the connection between successive hidden layers is all optical, without any optical-electrical conversion or analog-digital conversion. The proof of concept is demonstrated on a PRC consisting of 4 hidden layers and 320 interconnected neurons. In addition, we apply the deep PRC in the real-world signal equalization of an optical fiber communication system. It is found that the deep PRC owns strong ability to compensate the nonlinearity of fibers.

Abstract: Membrane external-cavity surface-emitting lasers (MECSELs) are at the forefront of pushing the performance limits of vertically emitting semiconductor lasers. Their simple idea of using just a very thin (hundreds of nanometers to few microns) gain membrane opens up new possibilities through uniform double side optical pumping and superior heat extraction from the active area. Moreover, these advantages of MECSELs enable more complex band gap engineering possibilities for the active region by the introduction of multiple types of quantum wells (QWs) to a single laser gain structure. In this paper, we present a new design strategy for laser gain structures with several types of QWs. The aim is to achieve broadband gain with relatively high power operation and potentially a flat spectral tuning range. The emphasis in our design is on ensuring sufficient gain over a wide wavelength range, having uniform pump absorption, and restricted carrier mobility between the different quantum wells during laser operation. A full-width half-maximum tuning range of > 70 nm (> 21.7 THz) with more than 125 mW of power through the entire tuning range at room temperature is demonstrated.

Abstract: We investigate the production of an isolated attosecond pulse~(IAP) via the phase-matching gating of high-harmonic generation by intense laser pulses. Our study is based on the integration of the propagation equation for the fundamental and generated fields with nonlinear polarisation found via the numerical solution of the time-dependent Schr\"odinger equation. We study the XUV energy as a function of the propagation distance (or the medium density) and find that the onset of the IAP production corresponds to the change from linear to quadratic dependence of this energy on the propagation distance (or density). Finally, we show that the upper limit of the fundamental pulse duration for which the IAP generation is feasible is defined by the temporal spreading of the fundamental pulse during the propagation. This nonlinear spreading is defined by the difference of the group velocities for the neutral and photoionised medium.

Abstract: Low-symmetry van der Waals materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we present a thermomechanical strategy to manipulate the HPhPs in $\alpha$-MoO$_3$ using high pressure and temperature treatment. The hot pressing engineers the stoichiometry of $\alpha$-MoO$_3$ by controllably introducing oxygen vacancy defects (OVDs), which cause a semiconductor-to-semimetal transition. Our density functional theory and finite-difference time-domain results, combined with experimental studies show that the OVDs induce a metastable metallic state by reducing the bandgap while modifying the intrinsic dielectric permittivity of $\alpha$-MoO$_3$. Photo-induced force microscopy confirms an average dielectric permittivity tunability of $|\Delta\varepsilon/\varepsilon|\approx0.35$ within a Reststrahlen band of $\alpha$-MoO$_3$, resulting in drastic shifts in the HPhP dispersion. The polariton lifetimes for pristine and hot-pressed flakes were measured as $0.92 \pm 0.06$ and $0.86 \pm 0.11$ ps, respectively, exhibiting a loss of only 7%, while the group velocity exhibited an increase of $38.8 \pm 0.2$%. The OVDs in $\alpha$-MoO$_3$ provide a low-loss platform that enables active tuning of mid-infrared HPhPs and have a profound impact on applications in super-resolution imaging, nanoscale thermal manipulation, boosted molecular sensing, and on-chip photonic circuits.

Abstract: Refractory metal nitrides have recently gained attention in various fields of modern photonics due to their cheap and robust production technology, silicon-technology compatibility, high thermal and mechanical resistance, and competitive optical characteristics in comparison to typical plasmonic materials like gold and silver. In this work, we demonstrate that by varying the stoichiometry of sputtered nitride films, both static and ultrafast optical responses of refractory metal nitrides can efficiently be controlled. We further prove that the spectral changes in ultrafast transient response are directly related to the position of the epsilon-near-zero region. At the same time, the analysis of the temporal dynamics allows us to identify three time components - the "fast" femtosecond one, the "moderate" picosecond one, and the "slow" at the nanosecond time scale. We also find out that the non-stoichiometry does not significantly decrease the recovery time of the reflectance value. Our results show the strong electron-phonon coupling and reveal the importance of both the electron and lattice temperature-induced changes in the permittivity near the ENZ region and the thermal origin of the long tail in the transient optical response of refractory nitrides.