Optics (physics.optics)

Abstract: The miniaturization of nonlinear light sources is central to the integrated photonic platform, driving a quest for high-efficiency frequency generation and mixing at the nanoscale. In this quest, the high-quality ($Q$) resonant dielectric nanostructures hold great promise, as they enhance nonlinear effects through the resonantly local electromagnetic fields overlapping the chosen nonlinear materials. Here, we propose a method for the enhanced sum-frequency generation (SFG) from etcheless lithium niobate (LiNbO$_{3}$) by utilizing the dual quasi-bound states in the continuum (quasi-BICs) in a one-dimensional resonant grating waveguide structure. Two high-$Q$ guided mode resonances corresponding to the dual quasi-BICs are respectively excited by two near-infrared input beams, generating a strong visible SFG signal with a remarkably high conversion efficiency of $3.66\times10^{-2}$ (which is five orders of magnitude higher than that of LiNbO$_{3}$ films of the same thickness) and a small full-width at half-maximum less than 0.2 nm. The SFG efficiency can be tuned via adjusting the grating geometry parameter or choosing the input beam polarization combination. Furthermore, the generated SFG signal can be maintained at a fixed wavelength without the appreciable loss of efficiency by selectively exciting the angular-dependent quasi-BICs, even if the wavelengths of input beams are tuned within a broad spectral range. Our results provide a simple but robust paradigm of high-efficiency frequency conversion on an easy-fabricated platform, which may find applications in nonlinear light sources and quantum photonics.

Abstract: We have developed a numerical method for calculating the second harmonic generation (SHG) generated by an anisotropic material whose optical properties present an arbitrary modulation in one dimension. The method is based on the Berreman 4x4 matrix formalism, which is generalized to include nonlinear optical phenomena. It can be used under oblique incidences of the input beam, and is valid even when the SHG frequency is close to photonic bands, where the usual slowly-varying-amplitude approximation breaks down. As an example of application, we have studied the SHG performance of ferroelectric and helielectric nematic liquid crystals. The latter present a helicoidal structure that can be distorted under electric field. In the different tests of the method we have analyzed the conditions for the most efficient SHG, and compared with previous results in the case there were any. The obtained results indicate that the present procedure may contribute to improve the structural design and enlarge the variety of nonlinear optical materials for their application in optical devices.

Abstract: We demonstrate, for the first time, sputtered PZT as a platform for the development of Si-based photonic devices such as rings, MZI, and electro-optic modulators. We report the optimization of PZT on MgO(002) substrate to obtain highly oriented PZT film oriented towards the (100) plane with a surface roughness of 2 nm. Si gratings were simulated for TE and TM mode with an efficiency of -2.2 dB/coupler -3 dB/coupler respectively with a polarization insensitive efficiency of 50% for both TE and TM mode. Si grating with an efficiency of around -10 dB/coupler and a 6 dB bandwidth of 30 nm was fabricated. DC Electro-optic characterization for MZI yielded a spectrum shift of 71 pm/V at the c-band.

Abstract: In this work, we have demonstrated a novel method to increase the electro-optic interaction in an intensity modulator at the C-band by optimizing the growth methodology of PZT with the metal (Ti/Pt) as a base material and the PZT poling architecture. Here, we have used a patterned Pt layer for PZT deposition instead of a buffer layer. By optimizing the PZT growth process, we have been able to do poling of the fabricated PZT film in an arbitrary direction as well as have achieved an enhanced electro-optic interaction, leading to a DC spectrum shift of 304 pm/V and a V{\pi} L{\pi} value of 0.6 V-cm on a Si-based MZI. For an electro-optic modulator, we are reporting the best values of DC spectrum shift and V{\pi} L{\pi} using perovskite as an active material. The high-speed measurement has yielded a tool-limited bandwidth of > 12GHz. The extrapolated bandwidth calculated using the slope of the modulation depth is 45 GHz. We also show via simulation an optimized gap of 4.5 {\mu}m and a PZT thickness of 1 {\mu}m that gives us a less than 1 V-dB.

Abstract: We report $\approx$400\% enhancement in PZT Pockels coefficient on DFT simulation of lattice strain due to phonon mode softening.The simulation showed a relation between the rumpling and the Pockels coefficient divergence that happens at -8\% and 25\% strain developed in PZT film.The simulation was verified experimentally by RF sputter deposited PZT film on Pt/SiO$_2$/Si layer.The strain developed in PZT varied from -0.04\% for film annealed at 530\degree C to -0.21\% for 600\degree C annealing temperature.The strain was insensitive to RF power with a value of -0.13\% for power varying between 70-130 W. Pockels coefficient enhancement was experimentally confirmed by Si Mach Zehnder interferometer loaded with PZT and probed with the co-planar electrode.An enhancement of $\approx$300\% in Pockels coefficient was observed from 2-8 pm/V with strain increasing from -0.04\% to -0.21\%. To the best of our knowledge, this is the first time study and demonstration of strain engineering on Pockels coefficient of PZT using DFT simulation, film deposition, and photonic device fabrication.