Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Abstract: Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topological protection. In this study, we investigate how bulk-edge interactions can influence the edge transport in planar bismuthene, a TCI with metallic edge states protected by in-plane mirror symmetry, using first principles calculations and symmetrized Wannier tight-binding models. By exploring the impact of various perturbation effects, such as device size, substrate potentials, and applied transverse electric field, we examine the evolution of the electronic structure and edge transport in planar bismuthene. Our findings demonstrate that the TCI states of planar bismuthene can be engineered to exhibit either a gapped or conducting unconventional helical spin texture via a combination of substrate and electric field effects. Furthermore, under strong electric fields, the edge states can be stabilized through a delicate control of the bulk-edge interactions. These results open up new directions for discovering novel spin transport patterns in topological materials and provide critical insights for the fabrication of topological spintronic devices.

Abstract: Landau quantization associated with the quantized cyclotron motion of electrons under magnetic field provides the effective way to investigate topologically protected quantum states with entangled degrees of freedom and multiple quantum numbers. Here we report the cascade of Landau quantization in a strained type-II Dirac semimetal NiTe2 with spectroscopic-imaging scanning tunneling microscopy. The uniform-height surfaces exhibit single-sequence Landau levels (LLs) at a magnetic field originating from the quantization of topological surface state (TSS) across the Fermi level. Strikingly, we reveal the multiple sequence of LLs in the strained surface regions where the rotation symmetry is broken. Firstprinciples calculations demonstrate that the multiple LLs attest to the remarkable lifting of the valley degeneracy of TSS by the in-plane uniaxial or shear strains. Our findings pave a pathway to tune multiple degrees of freedom and quantum numbers of TMDs via strain engineering for practical applications such as high-frequency rectifiers, Josephson diode and valleytronics.

Abstract: The impact of van der Waals interaction on the electronic structure between a pentacene monolayer and a graphite surface was investigated. Upon cooling the monolayer, newly formed dispersive bands, showing the constant final state nature overlapping with the non-dispersive, discrete molecular orbital state, is observed by low-energy angle-resolved photoelectron spectroscopy. The dispersive band consists of positive and negative intensities depending on the final state energy, indicating Fano resonance involving a discrete molecular state that couples a continuum state upon photoionization. A wave-function overlap is demonstrated according to their larger spread in unoccupied states even at the weakly bounded interface by Fano spectral analysis.

Abstract: Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot (DQD) is electrically tuned through the detuning energy and middle gate voltage (V_M). f_Rabi gradually decreases with increasing detuning energy; on the contrary, f_Rabi is positively correlated with V_M. We attribute our results to the change of electric field on SOI and the contribution of the excited state in quantum dots to f_Rabi. We further demonstrate an ultrafast f_Rabi exceeding 1.2 GHz, which evidences the strong SOI in our device. The discovery of an ultrafast and electrically tunable f_Rabi in a hole spin qubit has potential applications in semiconductor quantum computing.

Abstract: We analyze the time-evolution of a quantum dot which is proximized by a large-gap superconductor and weakly probed using the charge and heat currents into a wide-band metal electrode. We map out the full time dependence of these currents after initializing the system by a switch. We find that due to the proximity effect there are two simple yet distinct switching procedures which initialize a non-stationary mixture of the gate-voltage dependent eigenstates of the proximized quantum dot. We find in particular that the ensuing time-dependent heat current is a sensitive two-particle probe of the interplay of strong Coulomb interaction and induced superconducting pairing. The pairing can lead to a suppression of charge and heat current decay which we analyze in detail. The analysis of the results makes crucial use of analytic formulas obtained using fermionic duality, a ``dissipative symmetry'' of the master equation describing this class of open systems.

Abstract: We investigate the performance of thermoradiative (TR) cells using the III-V group of semiconductors, which include GaAs, GaSb, InAs, and InP, with the aim of determining their efficiency and finding the best TR cell materials among the III-V group. The TR cells generate electricity from thermal radiation, and their efficiency is influenced by several factors such as the bandgap, temperature difference, and absorption spectrum. To create a realistic model, we incorporate sub-bandgap and heat losses in our calculations and utilize density-functional theory to determine the energy gap and optical properties of each material. Our findings suggest that the effect of absorptivity on the material, especially when the sub-bandgap and heat losses are considered, can decrease the efficiency of TR cells. However, careful treatment of the absorptivity indicates that not all materials have the same trend of decrease in the TR cell efficiency when taking the loss mechanisms into account. We observe that GaSb exhibits the highest power density, while InP demonstrates the lowest one. Moreover, GaAs and InP exhibit relatively high efficiency without the sub-bandgap and heat losses, whereas InAs display lower efficiency without considering the losses, yet exhibit higher resistance to sub-bandgap and heat losses compared to the other materials, thus effectively becoming the best TR cell material in the III-V group of semiconductors.

Abstract: We propose a vortex Chern insulator, motivated by recent experimental demonstrations on programmable arrangements of cavity polariton vortices by [Alyatkin et al., ArXiv:2207.01850 (2022)] and [Wang et al., National Sci. Rev. 10, Nwac096 (2022)]. In the absence of any external fields, time-reversal symmetry is spontaneously by through polariton condensation into structured arrangements of localized co-rotating vortices. We characterize the response of the rotating condensate lattice by calculating the spectrum of Bogoliubov elementary excitations and observe the crossing of edge-states, of opposite vorticity, connecting bands with opposite Chern numbers. The emergent topologically nontrivial energy gap stems from inherent vortex anisotropic polariton-polariton interactions and does not require any spin-orbit coupling, external magnetic fields, or elliptically polarized pump fields.

Abstract: Topological lattice defects, such as dislocations and grain boundaries (GBs), are ubiquitously present in the bulk of quantum materials and externally tunable in metamaterials. In terms of robust modes, localized near the defect cores, they are instrumental in identifying topological crystals, featuring the hallmark band inversion at a finite momentum (translationally active type). Here we show that GB superlattices in both two- and three-dimensional translationally active higher-order topological insulators harbor a myriad of dispersive modes that are typically placed at finite energies, but always well-separated from the bulk states. However, when the Burgers vector of the constituting edge dislocations points toward the gapless corners or hinges, both second- and third-order topological insulators accommodate self-organized emergent topological metals in the GB mini Brillouin zone. We discuss possible material platforms where our proposed scenarios can be realized through band-structure and defect engineering.