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Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Tue, 04 Jul 2023

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1.Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

Authors:Abhikbrata Sarkar, Zhanning Wang, Mathew Rendell, Nico W. Hendrickx, Menno Veldhorst, Giordano Scappucci, Mohammad Khalifa, Joe Salfi, Andre Saraiva, A. S. Dzurak, A. R. Hamilton, Dimitrie Culcer

Abstract: In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio $T_1/T_\pi$, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as $5{\times}10^5$ at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane $g$-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge.

2.Magnonic Hong-Ou-Mandel Effect

Authors:Mikhail Kostylev

Abstract: We carried out numerical simulations of propagation of spin waves (magnons in quantum language) in a yttrium-iron garnet film. The numerical model is based on an original formalism. We demonstrated that a potential barrier for magnons, created by an Oersted field of a dc current flowing through a wire sitting on top of the film, is able to act as an electrically controlled partly transparent mirror for the magnons. We found that the mirror transparency can be set to 50% by properly adjusting the current strength, thus creating a semi-transparent mirror. A strong Hong-Ou-Mandel Effect for single magnons is expected in this configuration. The effect must be seen as two single magnons, launched simultaneously into the film from two transducers located from the opposite sides of the mirror, creating a two-microwave-photon state at the output port of one of the transducers. The probability of seeing those two-photon states at the output port of either transducer must be the same for both transducers.

3.Controlling electric and magnetic Purcell effects in phosphorene via strain engineering

Authors:P. P. Abrantes, W. J. M. Kort-Kamp, F. S. S. Rosa, C. Farina, F. A. Pinheiro, Tarik P. Cysne

Abstract: We investigate the spontaneous emission lifetime of a quantum emitter near a substrate coated with phosphorene under the influence of uniaxial strain. We consider both electric dipole and magnetic dipole-mediated spontaneous transitions from the excited to the ground state. The modeling of phosphorene is performed by employing a tight-binding model that goes beyond the usual low-energy description. We demonstrate that both electric and magnetic decay rates can be strongly tuned by the application of uniform strain, ranging from a near-total suppression of the Purcell effect to a remarkable enhancement of more than 1300% due to the high flexibility associated with the puckered lattice structure of phosphorene. We also unveil the use of strain as a mechanism to tailor the most probable decay pathways of the emitted quanta. Our results show that uniaxially strained phosphorene is an efficient and versatile material platform for the active control of light-matter interactions thanks to its extraordinary optomechanical properties.

4.A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Authors:E. E. Vdovin, M. T. Greenaway, Yu. N. Khanin, S. V. Morozov, O. Makarovsky, A. Patanè, A. Mishchenko, S. Slizovskiy, V. I. Fal'ko, A. K. Geim, K. S. Novoselov, L. Eaves

Abstract: Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.

5.From Edge State Physics to Entanglement Spectrum: Studying Interactions and Impurities in Two-Dimensional Topological Insulators

Authors:Marcela Derli, E. Novais

Abstract: We present a novel theoretical approach to incorporate electronic interactions in the study of two-dimensional topological insulators. By exploiting the correspondence between edge state physics and entanglement spectrum in gapped topological systems, we deconstruct the system into one-dimensional channels. This framework enables a simple and elegant inclusion of fermionic interactions into the discussion of topological insulators. We apply this approach to the Kane-Mele model with interactions and magnetic impurities.