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Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Tue, 08 Aug 2023

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1.Blocking particle dynamics in diamond chain with spatially increasing flux

Authors:Tomonari Mizoguchi, Yoshihito Kuno, Yasuhiro Hatsugai

Abstract: Spatial non-uniformity in tight-binding models serves as a source of rich phenomena. In this paper, we study a diamond-chain tight-binding model with a spatially-modulated magnetic flux at each plaquette. In the numerical studies with various combinations of the minimum and maximum flux values, we find the characteristic dynamics of a particle, namely, a particle slows down when approaching the plaquette with $\pi$-flux. This originates from the fact that the sharply localized eigenstates exist around the $\pi$-flux plaquette. These localized modes can be understood from a squared model of the original one. This characteristic blocked dynamics will be observed in photonic waveguides or cold atoms.

2.Perpendicular electronic transport and moiré-induced resonance in twisted interfaces of 3D graphite

Authors:Tenta Tani, Takuto Kawakami, Mikito Koshino

Abstract: We calculate the perpendicular electrical conductivity in twisted three-dimensional graphite (rotationally-stacked graphite pieces) by using the effective continuum model and the recursive Green's function method. In the low twist angle regime $(\theta \lesssim 2^\circ)$, the conductivity shows a non-monotonous dependence with a peak and dip structure as a function of the twist angle. By analyzing the momentum-resolved conductance and the local density of states, this behavior is attributed to the Fano resonance between continuum states of bulk graphite and interface-localized states, which is a remnant of the flat band in the magic-angle twisted bilayer graphene. We also apply the formulation to the high-angle regime near the commensurate angle $\theta \approx 21.8^\circ$, and reproduce the conductance peak observed in the experiment.

3.Some information on acoustic topological insulator

Authors:Partha Goswami, Udai Prakash Tyagi

Abstract: In this exceedingly short review article, we have provided some information on acoustic topological insulator for pedagogical purpose. Since, intrinsically acoustic systems do not have Kramers doublets due to spin-zero status, artificially acoustic spin-half states could be engineered as reported in refs. 5-26 maintaining time reversal symmetry. The high point of this article is an explanation of emergent Dirac physics in acoustic topological insulators.

4.Improved placement precision of implanted donor spin qubits in silicon using molecule ions

Authors:Danielle Holmes CQC2T, School of Electrical Engineering and Telecommunications, UNSW Sydney, Australia, Benjamin Wilhelm CQC2T, School of Electrical Engineering and Telecommunications, UNSW Sydney, Australia, Alexander M. Jakob CQC2T, School of Physics, The University of Melbourne, Australia, Xi Yu CQC2T, School of Electrical Engineering and Telecommunications, UNSW Sydney, Australia, Fay E. Hudson CQC2T, School of Electrical Engineering and Telecommunications, UNSW Sydney, Australia Diraq, Sydney, Australia, Kohei M. Itoh School of Fundamental Science and Technology, Keio University, Japan, Andrew S. Dzurak CQC2T, School of Electrical Engineering and Telecommunications, UNSW Sydney, Australia Diraq, Sydney, Australia, David N. Jamieson CQC2T, School of Physics, The University of Melbourne, Australia, Andrea Morello CQC2T, School of Electrical Engineering and Telecommunications, UNSW Sydney, Australia

Abstract: Donor spins in silicon-28 ($^{28}$Si) are among the most performant qubits in the solid state, offering record coherence times and gate fidelities above 99%. Donor spin qubits can be fabricated using the semiconductor-industry compatible method of deterministic ion implantation. Here we show that the precision of this fabrication method can be boosted by implanting molecule ions instead of single atoms. The bystander ions, co-implanted with the dopant of interest, carry additional kinetic energy and thus increase the detection confidence of deterministic donor implantation employing single ion detectors to signal the induced electron-hole pairs. This allows the placement uncertainty of donor qubits to be minimised without compromising on detection confidence. We investigate the suitability of phosphorus difluoride (PF$_2^+$) molecule ions to produce high quality P donor qubits. Since $^{19}$F nuclei have a spin of $I = 1/2$, it is imperative to ensure that they do not hyperfine couple to P donor electrons as they would cause decoherence by adding magnetic noise. Using secondary ion mass spectrometry, we confirm that F diffuses away from the active region of qubit devices while the P donors remain close to their original location during a donor activation anneal. PF$_2$-implanted qubit devices were then fabricated and electron spin resonance (ESR) measurements were performed on the P donor electron. A pure dephasing time of $T_2^* = 20.5 \pm 0.5$ $\mu$s and a coherence time of $T_2^{Hahn} = 424 \pm 5$ $\mu$s were extracted for the P donor electron-values comparable to those found in previous P-implanted qubit devices. Closer investigation of the P donor ESR spectrum revealed that no $^{19}$F nuclear spins were found in the vicinity of the P donor. Molecule ions therefore show great promise for producing high-precision deterministically-implanted arrays of long-lived donor spin qubits.

5.Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Authors:Sergey Trishin, Christian Lotze, Nils Krane, Katharina J. Franke

Abstract: Two-dimensional (2D) transition-metal dichalcogenides (TMDC) are considered highly promising platforms for next-generation optoelectronic devices. Owing to its atomically thin structure, device performance is strongly impacted by a minute amount of defects. Although defects are usually considered to be disturbing, defect engineering has become an important strategy to control and design new properties of 2D materials. Here, we produce single S vacancies in a monolayer of MoS$_2$ on Au(111). Using a combination of scanning tunneling and atomic force microscopy, we show that these defects are negatively charged and give rise to a Kondo resonance, revealing the presence of an unpaired electron spin exchange coupled to the metal substrate. The strength of the exchange coupling depends on the density of states at the Fermi level, which is modulated by the moir\'e structure of the MoS$_2$ lattice and the Au(111) substrate. In the absence of direct hybridization of MoS$_2$ with the metal substrate, the S vacancy remains charge-neutral. Our results suggest that defect engineering may be used to induce and tune magnetic properties of otherwise non-magnetic materials.

6.Resonant transport in a highly conducting single molecular junction via metal-metal covalent bond

Authors:Biswajit Pabi, Štepán Marek, Adwitiya Pal, Puja Kumari, Soumya Jyoti Ray, Arunabha Thakur, Richard Korytár, Atindra Nath Pal

Abstract: Achieving highly transmitting molecular junctions through resonant transport at low bias is key to the next-generation low-power molecular devices. Although, resonant transport in molecular junctions was observed by connecting a molecule between the metal electrodes via chemical anchors by applying a high source-drain bias (> 1V), the conductance was limited to < 0.1 G$_0$, G$_0$ being the quantum of conductance. Here, we report electronic transport measurements by directly connecting a Ferrocene molecule between Au electrodes at the ambient condition in a mechanically controllable break junction setup (MCBJ), revealing a conductance peak at ~ 0.2 G$_0$ in the conductance histogram. A similar experiment was repeated for Ferrocene terminated with amine (-NH2) and cyano (-CN) anchors, where conductance histograms exhibit an extended low conductance feature including the sharp high conductance peak, similar to pristine ferrocene. Statistical analysis of the data along with density functional theory-based transport calculation suggests the possible molecular conformation with a strong hybridization between the Au electrodes and Fe atom of Ferrocene molecule is responsible for a near-perfect transmission in the vicinity of the Fermi energy, leading to the resonant transport at a small applied bias (< 0.5V). Moreover, calculations including Van der Waals/dispersion corrections reveal a covalent like organometallic bonding between Au and the central Fe atom of Ferrocene, having bond energies of ~ 660 meV. Overall, our study not only demonstrates the realization of an air-stable highly transmitting molecular junction, but also provides an important insight about the nature of chemical bonding at the metal/organo-metallic interface.

7.Resonant multiple-phonon-assisted single-photon anti-Stokes photoluminescence in CsPbBr3 nanocrystals

Authors:Zhuoming Zhang, Sushrut Ghonge, Yang Ding, Shubin Zhang, Mona Berciu, Richard D. Schaller, Boldizsár Jankó, Masaru Kuno

Abstract: Lead-halide perovskite nanocrystals have attracted intense scrutiny due to their unusual interactions with light. They exhibit near-unity photoluminescence quantum yields, cooperative superfluorescence in colloidal superlattices, and possibly refrigerate optically when excited below gap. For the latter, multiple-phonon-assisted energy up-conversion to the band edge is followed by emission of higher energy, band gap photons. Unexpectedly strong electron-phonon interactions, however, are needed to explain near-unity up-conversion efficiencies wherein multiple-phonon absorption rates become competitive with multiple-phonon-emission mediated non-radiative relaxation. Here, we resolve this seeming contradiction to rationalize near-unity anti-Stokes photoluminescence efficiencies ($\eta_{ASPL}$) in CsPbBr3 nanocrystals as the consequence of resonant multiple-phonon absorption by polarons. The theory self-consistently explains paradoxically large efficiencies for intrinsically-disfavored, multiple-phonon-assisted anti-Stokes photoluminescence in nanocrystals. It also explains observed non-Arrhenius $\eta_{ASPL}$ temperature and energy detuning dependencies. Beyond this, the developed microscopic mechanism has immediate and important implications for applications of anti-Stokes photoluminescence towards condensed phase optical refrigeration, radiation-balanced lasers, and the development of ultra-stable optical cavities.

8.Magnetic Phases of Bilayer Quantum-Dot Hubbard Model Plaquettes

Authors:Donovan Buterakos, Sankar Das Sarma

Abstract: It has been demonstrated that small plaquettes of quantum dot spin qubits are capable of simulating condensed matter phenomena which arise from the Hubbard model, such as the collective Coulomb blockade and Nagaoka ferromagnetism. Motivated by recent materials developments, we investigate a bilayer arrangement of quantum dots with four dots in each layer which exhibits a complex ground state behavior. We find using a generalized Hubbard model with long-range Coulomb interactions, several distinct magnetic phases occur as the Coulomb interaction strength is varied, with possible ground states that are ferromagnetic, antiferromagnetic, or having both one antiferromagnetic and one ferromagnetic layer. We map out the full phase diagram of the system as it depends on the inter- and intra-layer Coulomb interaction strengths, and find that for a single layer, a similar but simpler effect occurs. We also predict interesting contrasts among electron, hole, and electron-hole bilayer systems arising from complex correlation physics. Observing the predicted magnetic configuration in already-existing few-dot semiconductor bilayer structures could prove to be an important assessment of current experimental quantum dot devices, particularly in the context of spin-qubit-based analog quantum simulations.