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Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Thu, 22 Jun 2023

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1.High Impedance Josephson Junction Resonators in the Transmission Line Geometry

Authors:Antti Ranni, Harald Havir, Subhomoy Haldar, Ville F. Maisi

Abstract: In this article we present an experimental study of microwave resonators made out of Josephson junctions. The junctions are embedded in a transmission line geometry so that they increase the inductance per length for the line. By comparing two devices with different input/output coupling strengths, we show that the coupling capacitors, however, add a significant amount to the total capacitance of the resonator. This makes the resonators with high coupling capacitance to act rather as lumped element resonators with inductance from the junctions and capacitance from the end sections. Based on a circuit analysis, we also show that the input and output couplings of the resonator are limited to a maximum value of $\omega_r Z_0 /4 Z_r$ where $\omega_r$ is the resonance frequency and $Z_0$ and $Z_r$ are the characteristic impedances of the input/output lines and the resonator respectively.

2.Electronic Polarization Effects in Core-Level Spectroscopy

Authors:Iskander Mukatayev, Gabriele D'Avino, Benoit Sklenard, Valerio Olevano, Jing Li

Abstract: In X-ray photoelectron spectroscopy (XPS), the injected hole interacts with the electronic polarization cloud induced by the hole itself, ultimately resulting in a lower binding energy. Such polarization effect can shift the core-level energy by more than 1 eV, as shown here by embedded many-body perturbation theory for the paradigmatic case of noble gas clusters made of Ar, Kr, or Xe. The polarization energy is almost identical for the different core-orbitals of a given atom, but it strongly depends on the position of the ionized atom in the cluster. An analytical formula is derived from classical continuum electrostatics, providing an effective and accurate description of polarization effects, which permits to achieve an excellent agreement with available experiments on noble gas clusters at a modest computational cost. Electronic polarization provides a crucial contribution to core levels absolute energies and chemical shifts.

3.Spin light emitting diode based on exciton fine structure tuning in quantum dots

Authors:A. V. Shumilin, T. S. Shamirzaev, D. S. Smirnov

Abstract: We propose a concept of quantum dot based light emitting diode that produces circularly polarized light due to the tuning of the exciton fine structure by magnetic field and electron nuclear hyperfine interaction. The device operates under injection of electrons and holes from nonmagnetic contacts in a small field of the order of milliteslas. Its size can be parametrically smaller than the light wavelength, and circular polarization degree of electroluminescence can reach 100%. The proposed concept is compatible with the micropillar cavities, which allows for the deterministic electrical generation of single circularly polarized photons.

4.Machine-Learning-Assisted and Real-Time-Feedback-Controlled Growth of InAs/GaAs Quantum Dots

Authors:Chao Shen, Wenkang Zhan, Kaiyao Xin, Manyang Li, Zhenyu Sun, Jian Tang, Zhaofeng Wu, Bo Xu, Zhongming Wei, Chao Zhao, Zhanguo Wang

Abstract: Self-assembled InAs/GaAs quantum dots (QDs) have properties highly valuable for developing various optoelectronic devices such as QD lasers and single photon sources. The applications strongly rely on the density and quality of these dots, which has motivated studies of the growth process control to realize high-quality epi-wafers and devices. Establishing the process parameters in molecular beam epitaxy (MBE) for a specific density of QDs is a multidimensional optimization challenge, usually addressed through time-consuming and iterative trial-and-error. Meanwhile, reflective high-energy electron diffraction (RHEED) has been widely used to capture a wealth of growth information in situ. However, it still faces the challenges of extracting information from noisy and overlapping images. Here, based on 3D ResNet, we developed a machine learning (ML) model specially designed for training RHEED videos instead of static images and providing real-time feedback on surface morphologies for process control. We demonstrated that ML from previous growth could predict the post-growth density of QDs, by successfully tuning the QD densities in near-real time from 1.5E10 cm-2 down to 3.8E8 cm-2 or up to 1.4 E11 cm-2. Compared to traditional methods, our approach, with in-situ tuning capabilities and excellent reliability, can dramatically expedite the material optimization process and improve the reproducibility of MBE growth, constituting significant progress for thin film growth techniques. The concepts and methodologies proved feasible in this work are promising to be applied to a variety of material growth processes, which will revolutionize semiconductor manufacturing for microelectronic and optoelectronic industries.

5.High-impedance surface acoustic wave resonators

Authors:Yadav P. Kandel, Suraj Thapa Magar, Arjun Iyer, William H. Renninger, John M. Nichol

Abstract: Because of their small size, low loss, and compatibility with magnetic fields and elevated temperatures, surface acoustic wave resonators hold significant potential as future quantum interconnects. Here, we design, fabricate, and characterize GHz-frequency surface acoustic wave resonators with the potential for strong capacitive coupling to nanoscale solid-state quantum systems, including semiconductor quantum dots. Strong capacitive coupling to such systems requires a large characteristic impedance, and the resonators we fabricate have impedance values above 100 $\Omega$. We achieve such high impedance values by tightly confining a Gaussian acoustic mode. At the same time, the resonators also have low loss, with quality factors of several thousand at millikelvin temperatures. These high-impedance resonators are expected to exhibit large vacuum electric-field fluctuations and have the potential for strong coupling to a variety of solid-state quantum systems.

6.Gilbert damping in metallic ferromagnets from Schwinger-Keldysh field theory: Nonlocality, nonuniformity, and anisotropy in the presence of spin-orbit coupling

Authors:Felipe Reyes-Osorio, Branislav K. Nikolic

Abstract: Understanding the origin of damping mechanisms in magnetization dynamics of metallic ferromagnets is a fundamental problem for nonequilibrium many-body physics of systems where quantum conduction electrons interact with localized spins assumed to be governed by the classical Landau-Lifshitz-Gilbert (LLG) equation. It is also of critical importance for applications as damping affects energy consumption and speed of spintronic and magnonic devices. Since the 1970s, a variety of linear-response and scattering theory approaches have been developed to produce widely used formulas for computation of spatially-independent Gilbert scalar parameter as the magnitude of the Gilbert damping term in the LLG equation. The largely-unexploited-for-this-purpose Schwinger-Keldysh field theory (SKFT) offers additional possibilities, such as rigorously deriving an extended LLG equation by integrating quantum electrons out. Here we derive such equation whose Gilbert damping for metallic ferromagnets in $d=1$-$3$ dimensions is nonlocal-i.e., dependent on position of all localized spins at a given time-and nonuniform, even if all localized spins are collinear and spin-orbit coupling (SOC) is absent. This is in sharp contrast to standard lore, where nonlocal damping is possible only if localized spins are noncollinear, while SOC is required to obtain a standard Gilbert damping scalar parameter for collinear localized spins. The same mechanism, which is physically due to retarded response of conduction electronic spins to the motion of localized spins, generates wavevector-dependent damping on spin waves, whereas nonzero SOC makes nonlocal damping anisotropic. Our analytical formulas, with their nonlocality being more prominent in low spatial dimensions $d \le 2$, are fully corroborated by numerically exact $d=1$ quantum-classical simulations.

7.Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures

Authors:Deyi Zhuo, Zi-Jie Yan, Zi-Ting Sun, Ling-Jie Zhou, Yi-Fan Zhao, Ruoxi Zhang, Ruobing Mei, Hemian Yi, Ke Wang, Moses H. W. Chan, Chao-Xing Liu, K. T. Law, Cui-Zu Chang

Abstract: An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi2Te4 flakes with an even number layer. All these samples have a thickness of ~10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

8.A quantum coherent spin in a two-dimensional material at room temperature

Authors:Hannah L. Stern, Carmem M. Gilardoni, Qiushi Gu, Simone Eizagirre Barker, Oliver Powell, Xiaoxi Deng, Louis Follet, Chi Li, Andrew Ramsay, Hark Hoe Tan, Igor Aharonovich, Mete Atatüre

Abstract: Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration, ideally at ambient conditions. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here, we report quantum coherent control under ambient conditions of a single-photon emitting defect spin in a a two-dimensional material, hexagonal boron nitride. We identify that the carbon-related defect has a spin-triplet electronic ground-state manifold. We demonstrate that the spin coherence is governed predominantly by coupling to only a few proximal nuclei and is prolonged by decoupling protocols. Our results allow for a room-temperature spin qubit coupled to a multi-qubit quantum register or quantum sensor with nanoscale sample proximity.

9.Disorder-induced topological quantum phase transitions in Euler semimetals

Authors:Wojciech J. Jankowski, Mohammedreza Noormandipour, Adrien Bouhon, Robert-Jan Slager

Abstract: We study the effect of disorder in systems having a non-trivial Euler class. As these recently proposed multi-gap topological phases come about by braiding non-Abelian charged band nodes residing between different bands to induce stable pairs within isolated band subspaces, novel properties that include a finite critical phase under the debraiding to a metal rather than a transition point and a modified stability may be expected when the disorder preserves the underlying $C_2\cal{T}$ or $\cal{P}\cal{T}$ symmetry on average. Employing elaborate numerical computations, we verify the robustness of associated topology by evaluating the changes in the average densities of states and conductivities for different types of disorders. Upon performing a scaling analysis around the corresponding quantum critical points we retrieve a universality for the localization length exponent of $\nu = 1.4 \pm 0.1$ for Euler-protected phases, relating to 2D percolation models. We generically find that quenched disorder drives Euler semimetals into critical metallic phases. Finally, we show that magnetic disorder can also induce topological transitions to quantum anomalous Hall plaquettes with local Chern numbers determined by the initial value of the Euler invariant.