arXiv daily

Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Thu, 06 Jul 2023

Other arXiv digests in this category:Thu, 14 Sep 2023; Wed, 13 Sep 2023; Tue, 12 Sep 2023; Mon, 11 Sep 2023; Fri, 08 Sep 2023; Tue, 05 Sep 2023; Fri, 01 Sep 2023; Thu, 31 Aug 2023; Wed, 30 Aug 2023; Tue, 29 Aug 2023; Mon, 28 Aug 2023; Fri, 25 Aug 2023; Thu, 24 Aug 2023; Wed, 23 Aug 2023; Tue, 22 Aug 2023; Mon, 21 Aug 2023; Fri, 18 Aug 2023; Thu, 17 Aug 2023; Wed, 16 Aug 2023; Tue, 15 Aug 2023; Mon, 14 Aug 2023; Fri, 11 Aug 2023; Thu, 10 Aug 2023; Wed, 09 Aug 2023; Tue, 08 Aug 2023; Mon, 07 Aug 2023; Fri, 04 Aug 2023; Thu, 03 Aug 2023; Wed, 02 Aug 2023; Tue, 01 Aug 2023; Mon, 31 Jul 2023; Fri, 28 Jul 2023; Thu, 27 Jul 2023; Wed, 26 Jul 2023; Tue, 25 Jul 2023; Mon, 24 Jul 2023; Fri, 21 Jul 2023; Thu, 20 Jul 2023; Wed, 19 Jul 2023; Tue, 18 Jul 2023; Mon, 17 Jul 2023; Fri, 14 Jul 2023; Thu, 13 Jul 2023; Wed, 12 Jul 2023; Tue, 11 Jul 2023; Mon, 10 Jul 2023; Fri, 07 Jul 2023; Wed, 05 Jul 2023; Tue, 04 Jul 2023; Mon, 03 Jul 2023; Fri, 30 Jun 2023; Thu, 29 Jun 2023; Wed, 28 Jun 2023; Tue, 27 Jun 2023; Mon, 26 Jun 2023; Fri, 23 Jun 2023; Thu, 22 Jun 2023; Wed, 21 Jun 2023; Tue, 20 Jun 2023; Fri, 16 Jun 2023; Thu, 15 Jun 2023; Tue, 13 Jun 2023; Mon, 12 Jun 2023; Fri, 09 Jun 2023; Thu, 08 Jun 2023; Wed, 07 Jun 2023; Tue, 06 Jun 2023; Mon, 05 Jun 2023; Fri, 02 Jun 2023; Thu, 01 Jun 2023; Wed, 31 May 2023; Tue, 30 May 2023; Mon, 29 May 2023; Fri, 26 May 2023; Thu, 25 May 2023; Wed, 24 May 2023; Tue, 23 May 2023; Mon, 22 May 2023; Fri, 19 May 2023; Thu, 18 May 2023; Wed, 17 May 2023; Tue, 16 May 2023; Mon, 15 May 2023; Fri, 12 May 2023; Thu, 11 May 2023; Wed, 10 May 2023; Tue, 09 May 2023; Mon, 08 May 2023; Fri, 05 May 2023; Thu, 04 May 2023; Wed, 03 May 2023; Tue, 02 May 2023; Mon, 01 May 2023; Fri, 28 Apr 2023; Thu, 27 Apr 2023; Wed, 26 Apr 2023; Tue, 25 Apr 2023; Mon, 24 Apr 2023; Fri, 21 Apr 2023; Thu, 20 Apr 2023; Wed, 19 Apr 2023; Tue, 18 Apr 2023; Mon, 17 Apr 2023; Fri, 14 Apr 2023; Thu, 13 Apr 2023; Wed, 12 Apr 2023; Tue, 11 Apr 2023; Mon, 10 Apr 2023
1.Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF$_6/$H$_2$ plasma

Authors:Azmain A. Hossain, Haozhe Wang, David S. Catherall, Martin Leung, Harm C. M. Knoops, James R. Renzas, Austin J. Minnich

Abstract: Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with Angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have been reported, they either employ HF vapor, incurring practical complications; or the etch rate lacks the desired control. Further, the superconducting characteristics of the etched films have not been characterized. Here, we report an isotropic plasma-thermal TiN ALE process consisting of sequential exposures to molecular oxygen and an SF$_6$/H$_2$ plasma. For certain ratios of SF$_6$:H$_2$ flow rates, we observe selective etching of TiO$_2$ over TiN, enabling self-limiting etching within a cycle. Etch rates were measured to vary from 1.1 \r{A}/cycle at 150 $^\circ$C to 3.2 \r{A}/cycle at 350 $^\circ$C using ex-situ ellipsometry. We demonstrate that the superconducting critical temperature of the etched film does not decrease beyond that expected from the decrease in film thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of TiN in microwave kinetic inductance detectors and superconducting qubits.

2.Spin and orbital Edelstein effect in a bilayer system with Rashba interaction

Authors:Sergio Leiva M., Jürgen Henk, Ingrid Mertig, Annika Johansson

Abstract: The spin Edelstein effect has proven to be a promising phenomenon to generate spin polarization from a charge current in systems without inversion symmetry. In recent years, a current-induced orbital magnetization, called orbital Edelstein effect, has been predicted for various systems with broken inversion symmetry, using the atom-centered approximation and the modern theory of orbital magnetization. In this work, we study the current-induced spin and orbital magnetization for a bilayer system with Rashba interaction, using the modern theory of orbital magnetization and Boltzmann transport theory in relaxation-time approximation. We found that the orbital effect can be significantly larger than the spin effect, depending on the model parameters. Furthermore, the Edelstein response can be enhanced, suppressed, and even reversed, depending on the relation of the effective Rashba parameters of each layer. A sign change of the orbital polarization is related to an interchange of the corresponding layer localization of the states.

3.Unusual surface states associated with the PT-symmetry breaking and antiferromagnetic band folding in NdSb

Authors:Asuka Honma, Daichi Takane, Seigo Souma, Yongjian Wang, Kosuke Nakayama, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yoichi Ando, Takafumi Sato

Abstract: We have performed micro-focused angle-resolved photoemission spectroscopy on NdSb which exhibits the type-I antiferromagnetism below TN = 16 K. We succeeded in selectively observing the band structure for all the three types of single-q antiferromagnetic (AF) domains at the surface. We found that the two of three surfaces whose AF-ordering vector lies within the surface plane commonly show two-fold-symmetric surface states (SSs) around the bulk-band edges, whereas the other surface with an out-of-plane AF-ordering vector displays four-fold-symmetric shallow electronlike SS at the Brillouin-zone center. We suggest that these SSs commonly originate from the combination of the PT (space-inversion and time-reversal) symmetry breaking at the surface and the band folding due to the AF order. The present results pave a pathway toward understanding the relationship between the symmetry and the surface electronic states in antiferromagnets.

4.Colored delta-T noise in Fractional Quantum Hall liquids

Authors:K. Iyer, J. Rech, T. Jonckheere, L. Raymond, B. Grémaud, T. Martin

Abstract: Photons are emitted or absorbed by a nano-circuit under both equilibrium and non-equilibrium situations. Here, we focus on the non-equilibrium situation arising due to a temperature difference between the leads of a quantum point contact, and study the finite frequency (colored) noise. We explore this delta-$T$ noise in the finite frequency regime for two systems: conventional conductors described by Fermi liquid scattering theory and the fractional quantum Hall system at Laughlin filling fractions, described by the chiral Luttinger liquid formalism. We study the emission noise, its expansion in the temperature difference (focusing on the quadratic component) as well as the excess emission noise defined with respect to a properly chosen equilibrium situation. The behavior of these quantities are markedly different for the fractional quantum Hall system compared to Fermi liquids, signalling the role of strong correlations. We briefly treat the strong backscattering regime of the fractional quantum Hall liquid, where a behavior closer to the Fermi liquid case is observed.

5.Electrostatically-induced strain of graphene on GaN nanorods

Authors:Jakub Kierdaszuk, Rafał Bożek, Tomasz Stefaniuk, Ewelina Możdzyńska, Karolina Piętak-Jurczak, Sebastian Złotnik, Vitaly Zubialevich, Aleksandra Przewłoka, Aleksandra Krajewska, Wawrzyniec Kaszub, Marta Gryglas-Borysiewicz, Andrzej Wysmołek, Johannes Binder, Aneta Drabińska

Abstract: Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices.

6.Circular current in a one-dimensional open quantum ring in the presence of magnetic field and spin-orbit interaction

Authors:Moumita Patra

Abstract: In an open quantum system having a channel in the form of loop geometry, the current inside the channel, namely circular current, and overall junction current, namely transport current, can be different. A quantum ring has doubly degenerate eigen energies due to periodic boundary condition that is broken in an asymmetric ring where the ring is asymmetrically connected to the external electrodes. Kramers' degeneracy and spin degeneracy can be lifted by considering non-zero magnetic field and spin-orbit interaction (SOI), respectively. Here, we find that symmetry breaking impacts the circular current density vs energy ($E$) spectra in addition to lifting the degeneracy. For charge and spin current densities, the corresponding effects are not the same. Under symmetry-breaking they may remain symmetric or anti-symmetric or asymmetric around $E = 0$ whereas the transmission function (which is proportional to the junction current density) vs energy characteristic remains symmetric around $E = 0$. This study leads us to estimate the qualitative nature of the circular current and the choices of Fermi-energy/chemical potential to have a net non-zero current. As a result, we may manipulate the system to generate pure currents of charge, spin, or both, which is necessary for any spintronic and electronic applications.

7.Classification and magic magnetic-field directions for spin-orbit-coupled double quantum dots

Authors:Aritra Sen, György Frank, Baksa Kolok, Jeroen Danon, András Pályi

Abstract: The spin of a single electron confined in a semiconductor quantum dot is a natural qubit candidate. Fundamental building blocks of spin-based quantum computing have been demonstrated in double quantum dots with significant spin-orbit coupling. Here, we show that spin-orbit-coupled double quantum dots can be categorised in six classes, according to a partitioning of the multi-dimensional space of their $g$-tensors. The class determines physical characteristics of the double dot, i.e., features in transport, spectroscopy and coherence measurements, as well as qubit control, shuttling, and readout experiments. In particular, we predict that the spin physics is highly simplified due to pseudospin conservation, whenever the external magnetic field is pointing to special directions (`magic directions'), where the number of special directions is determined by the class. We also analyze the existence and relevance of magic loops in the space of magnetic-field directions, corresponding to equal local Zeeman splittings. These results present an important step toward precise interpretation and efficient design of spin-based quantum computing experiments in materials with strong spin-orbit coupling.

8.Engineering non-Hermitian Second Order Topological Insulator in Quasicrystals

Authors:Chakradhar Rangi, Ka-Ming Tam, Juana Moreno

Abstract: Non-Hermitian topological phases have gained immense attention due to their potential to unlock novel features beyond Hermitian bounds. PT-symmetric (Parity Time-reversal symmetric) non-Hermitian models have been studied extensively over the past decade. In recent years, the topological properties of general non-Hermitian models, regardless of the balance between gains and losses, have also attracted vast attention. Here we propose a non-Hermitian second-order topological (SOT) insulator that hosts gapless corner states on a two-dimensional quasi-crystalline lattice (QL). We first construct a non-Hermitian extension of the Bernevig-Hughes-Zhang (BHZ) model on a QL generated by the Amman-Beenker (AB) tiling. This model has real spectra and supports helical edge states. Corner states emerge by adding a proper Wilson mass term that gaps out the edge states. We propose two variations of the mass term that result in fascinating characteristics. In the first variation, we obtain a purely real spectra for the second-order topological phase. In the latter, we get a complex spectra with corner states localized at only two corners. Our findings pave a path to engineering exotic SOT phases where corner states can be localized at designated corners.

9.Spin-Polarized Majorana Zero Modes in Proximitized Superconducting Penta-Silicene Nanoribbons

Authors:R. C. Bento Ribeiro, J. H. Correa, L. S. Ricco, I. A. Shelykh, M. A. Continentino, A. C. Seridonio, M. Minissale, G. L. Lay, M. S. Figueira

Abstract: We theoretically investigate the possibility of obtaining Majorana zero modes (MZMs) in penta-silicene nanoribbons (p-SiNRs) with induced \textit{p}-wave superconductivity. The model explicitly considers an external magnetic field perpendicularly applied to the nanoribbon plane, as well as an extrinsic Rashba spin-orbit coupling (RSOC), in addition to the first nearest neighbor hopping term and \textit{p}-wave superconducting pairing. By analyzing the dispersion relation profiles, we observe the successive closing and reopening of the induced superconducting gap with a single spin component, indicating a spin-polarized topological phase transition (TPT). Correspondingly, the plots of the energy spectrum versus the chemical potential reveal the existence of zero-energy states with a preferential spin orientation characterized by nonoverlapping wave functions localized at opposite ends of the superconducting p-SiNRs. These findings strongly suggest the emergence of topologically protected, spin-polarized MZMs at the ends of the p-SiNRs with induced \textit{p}-wave superconducting pairing, which can be realized by proximitizing the nanoribbon with an \textit{s}-wave superconductor, such as lead. The proposal paves the way for silicene-based Majorana devices hosting multiple MZMs with a well-defined spin orientation, with possible applications in fault-tolerant quantum computing platforms and Majorana spintronics.

10.Design of a Majorana trijunction

Authors:Juan Daniel Torres Luna, Sathish R. Kuppuswamy, Anton R. Akhmerov

Abstract: Braiding of Majorana states demonstrates their non-Abelian exchange statistics. One implementation of braiding requires control of the pairwise couplings between all Majorana states in a trijunction device. In order to have adiabaticity, a trijunction device requires the desired pair coupling to be sufficently large and the undesired couplings to vanish. In this work, we design and simulate of a trijunction device in a two-dimensional electron gas with a focus on the normal region that connects three Majorana states. We use an optimisation approach to find the operational regime of the device in a multi-dimensional voltage space. Using the optimization results, we simulate a braiding experiment by adiabatically coupling different pairs of Majorana states without closing the topological gap. We then evaluate the feasibility of braiding in a trijunction device for different shapes and disorder strengths.