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Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Thu, 13 Jul 2023

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1.A Versatile Method of Engineering the Electron Wavefunction of Hybrid Quantum Devices

Authors:Guoan Li, Guang Yang, Ting Lin, M. Rossi, G. Badawy, Zhiyuan Zhang, Xiaofan Shi, Jiayu Shi, Degui Qian, Fang Lu, Lin Gu, An-Qi Wang, Zhaozheng Lyu, Guangtong Liu, Fanming Qu, Ziwei Dou, Qinghua Zhang, E. P. A. M. Bakkers, M. P. Nowak, P. Wójcik, Li Lu, Jie Shen

Abstract: With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schr\"odinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.

2.Hydrodynamic magnetotransport in two-dimensional electron systems with macroscopic obstacles

Authors:P. S. Alekseev, A. P. Dmitriev

Abstract: In high-quality conductors, the hydrodynamic regime of electron transport has been recently realized. In this work we theoretically investigate magnetotransport of a viscous electron fluid in samples with electron-impermeable obstacles. We use the two approaches to describe the fluid flow. The first one is based on the equations of hydrodynamics of a charged fluid, which assume that the kinetic equation takes into account the two harmonics of the electron distribution function. The second approach is based on the equations that are obtained by taking into account three harmonics of the distribution function (''quasi-hydrodynamics''). Within the hydrodynamic approach, we consider the cases of the rough and the smooth edges of the disks, on which the electron scattering is diffusive or specular, respectively. The longitudinal magnetoresistivity turns out to be strong and negative, the same for both rough and smooth discs edges to within small corrections. For rough discs, the Hall resistivity is equal to its standard value. For smooth discs the Hall resistance acquire a small correction to the standard value, proportional to the Hall viscosity. In the quasi-hydrodynamic approach, we considered the case of smooth discs and small magnetic fields. In the regime when the flow is substantially different from the hydrodynamic one, the longitudinal resistivity does not depend on the shear stress relaxation time (but depends on the relaxation time of the third angular harmonic), while the correction to the standard Hall resistivity does not depend on both relaxation times. We compare the results of the hydrodynamic calculation of the longitudinal resistance with the experimental data on magnetotransport in high-quality GaAs quantum wells with macroscopic defects. A good agreement of theory and experiment evidences in favor of the realization of the hydrodynamic transport regime in such systems.

3.Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions

Authors:M. Coraiola, D. Z. Haxell, D. Sabonis, M. Hinderling, S. C. ten Kate, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, F. Nichele

Abstract: Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hybrid three-terminal Josephson junction. Andreev bands reveal spin-degeneracy breaking, with level splitting in excess of 9 GHz, and zero-energy crossings associated to ground state fermion parity transitions, in agreement with theoretical predictions. Both effects occur without the need of external magnetic fields or sizable charging energies and are tuned locally by controlling superconducting phase differences. Our results highlight the potential of multiterminal hybrid devices for engineering quantum states.

4.Flip-chip-based fast inductive parity readout of a planar superconducting island

Authors:M. Hinderling, S. C. ten Kate, D. Z. Haxell, M. Coraiola, S. Paredes, E. Cheah, F. Krizek, R. Schott, W. Wegscheider, D. Sabonis, F. Nichele

Abstract: Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time parity measurement in a superconducting island embedded in a superconducting loop and realized in a hybrid two-dimensional heterostructure using a microwave resonator. Device and readout resonator are located on separate chips, connected via flip-chip bonding, and couple inductively through vacuum. The superconducting resonator detects the parity-dependent circuit inductance, allowing for fast and non-destructive parity readout. We resolved even and odd parity states with signal-to-noise ratio SNR $\approx3$ with an integration time of $20~\mu$s and detection fidelity exceeding 98%. Real-time parity measurement showed state lifetime extending into millisecond range. Our approach will lead to better understanding of coherence-limiting mechanisms in superconducting quantum hardware and provide novel readout schemes for hybrid qubits.

5.Single spin magnetometry and relaxometry applied to antiferromagnetic materials

Authors:Aurore Finco, Vincent Jacques

Abstract: Despite the considerable interest for antiferromagnets which appeared with the perspective of using them for spintronics, their experimental study, including the imaging of antiferromagnetic textures, remains a challenge. To address this issue, quantum sensors, and in particular the nitrogen-vacancy (NV) defects in diamond have become a widespread technical solution. We review here the recent applications of single NV centers to study a large variety of antiferromagnetic materials, from quantitative imaging of antiferromagnetic domains and non-collinear states, to the detection of spin waves confined in antiferromagnetic textures and the non-perturbative measurement of spin transport properties. We conclude with recent developments improving further the magnetic sensitivity of scanning NV microscopy, opening the way to detailed investigations of the internal texture of antiferromagnetic objects.

6.Impact of vacancies on twisted bilayer graphene quantum point contacts

Authors:Pablo Moles, Francisco Domínguez-Adame, Leonor Chico

Abstract: We carry out an extensive numerical study of low-temperature electronic transport in quantum point contacts based on twisted bilayer graphene. Assuming ballistic electron dynamics, quantized plateaus in the conductance are observed in defect-free samples when the twisting angle is large enough. However, plateaus are smeared out and hardly noticeable on decreasing the angle. Close to the magic angle, the conductance around the charge neutrality point drops significantly and the quantization steps visible at higher angles are no longer appreciable. Furthermore, we consider the effects of a random distribution of vacancies on the quantum point contact. Whereas the electron-hole symmetry is broken in pristine samples, we find that this symmetry is restored upon increasing the concentration of vacancies. We explain this effect by a reduction of the effective interlayer coupling due to the presence of the vacancies.

7.Edge state behavior in a Su-Schrieffer-Heeger like model with periodically modulated hopping

Authors:Satyaki Kar

Abstract: Su-Schrieffer-Heeger (SSH) model is one of the simplest models to show topological end/edge states and the existence of Majorana fermions. Here we consider a SSH like model both in one and two dimensions where a nearest neighbor hopping features spatially periodic modulations. In the 1D chain, we witness appearance of new in-gap end states apart from a pair of Majorana zero modes (MZM) when the hopping periodicity go beyond two lattice spacings. The pair of MZMs, that appear in the topological regime, characterize the end modes each existing in either end of the chain. These, however, crossover to both-end end modes for small hopping detuning strength in a finite chain. Contrarily in a 2D SSH model with symmetric hopping that we consider, both non-zero and zero energy topological states appear in a finite square lattice even with a simple staggered hopping, though the zero energy modes disappear in a ribbon configuration. Apart from edge modes, the 2D system also features corner modes as well as modes with satellite peaks distributed non-randomly within the lattice. In both the dimensions, an increase in the periodicity of hopping modulation causes the zero energy Majorana modes to become available for either sign of the detuning. But interestingly with different periodicity for hopping modulations in the two directions, the zero energy modes in a 2D model become rarer and does not appear for all strength and sign of the detuning.

8.Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Authors:Sakthi Priya Amirtharaj, Zhiyuan Xie, Josephine Si Yu See, Gabriele Rolleri, Wen Chen, Alexandre Bouhelier, Emanuel Lörtscher, Christophe Galland

Abstract: Electrically connected and plasmonically enhanced molecular junctions combine the optical functionalities of high field confinement and enhancement (cavity function), and of high radiative efficiency (antenna function) with the electrical functionalities of molecular transport and electrically driven light emission. They are supposed to play a leading role in emerging nanoscale optoelectronic devices; yet, this development is hindered by an insufficient control and understanding of atomic-scale phenomena that govern the optical and electrical behavior of plasmonic nanojunctions under ambient operating conditions. For instance, displacement of a single atom may drastically influence the junction's conductance and its optical near-field distribution. Here, we investigate tunneling-induced light emission from a self-assembled metal-molecule-metal junction embedded in a plasmonic cavity at room-temperature. We find that despite the presence of hundreds of molecules in the junction, electrical conductance and light emission are both highly sensitive to atomic-scale fluctuations - a phenomenology reminiscent of picocavities observed in Raman scattering and of luminescence blinking from photo-excited plasmonic junctions. We present a minimal electrical model that is able to capture all main experimental features. Contrasting with these microscopic fluctuations, the overall plasmonic and electronic functionalities of our devices feature an excellent long-term stability and reproducibility at room temperature and under electrical bias of several volts, allowing for measurements over several months. Our work contributes to the understanding of atomic fluctuations in molecular plasmonic junctions and to the development of more robust and scalable platforms for nanoscale optoelectronics.