Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Abstract: Graphene-based plasmonic devices are regarded to be suitable for a plethora of applications, ranging from mid-infrared to terahertz frequencies. In this regard, among the peculiarities associated with graphene, it is well known that plasmons are tunable and tend to show stronger confinement as well as a longer lifetime than in the noble-metal counterpart. However, due to the two-dimensional specificity of graphene, the presence of defects might induce stronger effects than in bulky noble metals. Here, we theoretically investigate the impact of structural defects hosted by graphene on selected figures of merit associated to localized plasmons, which are of key technological importance for plasmon-based molecular sensing. By considering an optimized graphene nanostructure, we provide a comparative analysis intended to shed light on the impact of the type of defect on graphene localized plasmons, that regards distinct types of defects commonly arising from fabrication procedures or exposure to radiation. This understanding will help industry and academia in better identifying the most suitable applications for graphene-based molecular sensing.

Abstract: The asymmetry of spin-wave patterns in confined rectangular Ni$_{80}$Fe$_{20}$ microstrips, both in single and double-strip geometries, is quantified. The results of TR-STXM and micromagnetic simulations are compared. For the TR-STXM measurements and the corresponding simulations the excitation was a uniform microwave field with a fixed frequency of 9.43 GHz, while the external static magnetic field was swept. In the easy axis orientation of the analyzed microstrip, the results show a higher asymmetry for the double microstrip design, indicating an influence of the additional microstrip placed in close proximity to the analyzed one.

Abstract: The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.

Abstract: We investigate the relaxation dynamics in a chiral one-dimensional quantum channel with finite range interactions, driven out of equilibrium by the injection of high-energy electrons. While the distribution of high-energy electrons, after dissipation of some of their energy, has been examined previously (arXiv:2108.00685), we study the distribution of charge carriers excited from the channel's Fermi sea during this process. Utilizing a detector to measure the energetic imprint in the Fermi sea downstream of the injection point, we discover an initial symmetry in the distribution of excited electrons and holes relative to the Fermi level. However, this symmetry breaks down with stronger interactions and increased propagation distances, attributed to terms of order four and beyond in the interaction. We provide an intuitive interpretation of these results in terms of interference between states with different numbers of plasmons in the Fermi sea.

Abstract: Breaking of inversion symmetry leads to nonlinear and nonreciprocal electron transport, in which the voltage response does not invert with the reversal of the current direction. Many systems have incorporated inversion symmetry breaking into their band or crystal structures. In this work, we demonstrate that a conventional two-dimensional electron gas (2DEG) system with a back gate shows non-reciprocal behavior (with voltage proportional to current squared) in the quantum Hall regime, which depends on the out-of-plane magnetic field and contact configuration. The inversion symmetry is broken due to the presence of the back gate and magnetic field, and our phenomenological model provides a qualitative explanation of the experimental data. Our results suggest a universal mechanism that gives rise to non-reciprocal behavior in gated samples.

Abstract: We theoretically predict the existence of a non-zero magnetochiral anisotropy-induced nonlinear Hall effect or a second harmonic Hall voltage transverse to an applied current in spin-orbit coupled Rashba conductors in the presence of a large in-plane magnetic field B. This is distinct from the Berry curvature dipole-induced nonlinear Hall effect in systems with non-trivial bandstructure because the former requires broken time reversal symmetry while the latter is non-zero even in time reversal symmetric systems with broken inversion symmetry. We calculate the effect by considering the local change in the single particle energy due to the applied electric field E and expanding the electron distribution function perturbatively up to the quadratic order in the electric field. We find that, for E||B, the magnitude of the nonlinear Hall current flowing in a direction perpendicular to the applied electric field is exactly 1/3 of the magnitude of the magnetochiral anisotropy-induced rectification current obtained in the E\perp B configuration, which has already been successfully measured in Rashba systems.