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Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

Fri, 02 Jun 2023

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1.Ultrafast single-pulse all-optical switching in synthetic ferrimagnetic Tb/Co/Gd multilayers

Authors:Julian Hintermayr, Pingzhi Li, Roy Rosenkamp, Youri L. W. van Hees, Junta Igarashi, Stéphane Mangin, Reinoud Lavrijsen, Grégory Malinowski, Bert Koopmans

Abstract: In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high magnetic anisotropy. In particular, we study the effect of varying Tb thicknesses to disentangle the role of the two rare earth elements. Even though the role of magnetic compensation has been considered to be crucial, we find that the threshold fluence for switching is largely independent of the Tb content. Moreover, we identify the timescale for the magnetization to cross zero to be within the first ps after laser excitation using time-resolved MOKE. We conclude that the switching is governed mostly by interactions between Co and Gd.

2.Straintronics using the monolayer-Xene platform -- a comparative study

Authors:Swastik Sahoo, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band structure analysis, we show the effect of strain on the K-point, and calculate the directional piezoresistances for the buckled Xenes as per their critical strain limit. Further, we compare the relevant gauge factors, and their sinusoidal dependences on the transport angle akin to silicene and graphene. The strain-insensitive transport angles corresponding to the zero gauge factors are 81 degree and 34 degree for armchair and zigzag strains, respectively, for silicene and germanene. For stanene as the strain limit is extended to 10% and notable changes in the fundamental parameters, the critical angle for stanene along armchair and zigzag directions are 69 degree and 34 degree respectively. The small values of gauge factors are attributed to their stable Dirac cones and strain-independent valley degeneracies. We also explore conductance modulation, which is quantized in nature and exhibits a similar pattern with other transport parameters against a change in strain. Based on the obtained results, we propose the buckled Xenes as an interconnect in flexible electronics and are promising candidates for various applications in straintronics.

3.Chiral Anomaly Beyond Fermionic Paradigm

Authors:Tianyu Liu, Zheng Shi, Hai-Zhou Lu, X. C. Xie

Abstract: Two-dimensional magnets have manifested themselves as promising candidates for quantum devices. We here report that the edge and strain effects during the device fabrication with two-dimensional honeycomb ferromagnets such as CrX$_3$ (X=Cl, I, Br) and CrXTe$_3$ (X=Si, Ge) can be characterized by a (1+1)-dimensional magnon chiral anomaly beyond the fermionic paradigm. In the presence of zigzag edges, a pair of chiral bulk-edge magnon bands appear and cause an imbalance of left- and right-chirality magnons when subjected to nonuniform temperature or magnetic fields. In the presence of a uniaxial strain, the bulk Dirac magnons are broken into chiral magnon pseudo-Landau levels, resulting in a magnon chiral anomaly observable through a negative strain-resistivity of the magnetic dipole and heat. Our work demonstrates a chiral anomaly with (quasi)particles obeying non-fermionic statistics and will be instructive in understanding anomalous magnon transport.

4.Melting of electronic and excitonic crystals in 2D semiconductor moiré patterns: a perspective from the Lindemann criterion

Authors:Jiyong Zhou, Jianju Tang, Hongyi Yu

Abstract: Using the Lindemann criterion, we analyzed the quantum and thermal melting of electronic and excitonic crystals recently discovered in 2D semiconductor moir\'e patterns. We show that the finite 2D screening of the atomically thin material can suppress (enhance) the inter-site Coulomb (dipolar) interaction strength, thus inhibits (facilitates) the formation of the electronic (excitonic) crystal. Meanwhile, a strong enough moir\'e confinement is found to be essential for realizing the crystal phase with a lattice constant near 10 nm or shorter. From the calculated Lindemann ratio which quantifies the fluctuation of the site displacement, we estimate that the crystal will melt into a liquid above a temperature in the order of several tens Kelvin.

5.Emergent Trion-Phonon Coupling in Atomically-Reconstructed MoSe$_2$-WSe$_2$ Heterobilayers

Authors:Sebastian Meier, Yaroslav Zhumagulov, Matthias Dietl, Philipp Parzefall, Michael Kempf, Johannes Holler, Philipp Nagler, Paulo E. Faria Junior, Jaroslav Fabian, Tobias Korn, Christian Schüller

Abstract: In low-temperature resonant Raman experiments on MoSe$_2$-WSe$_2$ heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy, close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric lineshape. The HSM shows a pronounced resonance with the intralayer hybrid trions (HX$^-$) of the MoSe$_2$ and WSe$_2$ layers, only. No resonance with the neutral intralayer excitons is found. First-principles calculations reveal a strong coupling of Q-valley states, which are delocalized over both layers and participate in the HX$^-$, with the SM. This emerging trion-phonon coupling may be relevant for experiments on gate-controlled heterobilayers.

6.Thermoelectric properties of a double quantum dot out of equilibrium in Kondo and intermediate valence regimes

Authors:Diego Pérez Daroca, Pablo Roura-Bas, Armando A. Aligia

Abstract: We study a system composed of two quantum dots connected in series between two leads at different temperatures, in the limit of large intratomic repulsion. Using the non-crossing approximation, we calculate the spectral densities at both dots $\rho_i(\omega)$, the thermal and thermoelectric responses, thermopower and figure of merit in different regimes. The interatomic repulsionleads to finite heat transport even if the hopping between the dots $t=0$. The thermopower can be very large compared to single-dot systems in several regimes. The changes in sign of the thermoelectric current can be understood from the position and magnitude of the Kondo and charge-transfer peaks in $\rho_i(\omega)$. The figure of merit can reach values near 0.7. The violation of the Wiedemann-Franz law is much more significant than in previously studied nanoscopic systems. An analysis of the widths of $\rho_i(\omega)$ indicates that the dots are at effective temperatures $T_i$ intermediate between those of the two leads, which tend to be the same for large $T$.

7.Continuous-variable quantum optics and resource theory for ultrafast semiconductor spectroscopy

Authors:Carolin Lüders, Franziska Barkhausen, Matthias Pukrop, Elena Rozas, Jan Sperling, Stefan Schumacher, Marc Aßmann

Abstract: In this review, we discuss the use of continuous variable spectroscopy techniques for investigating quantum coherence and light-matter interactions in semiconductor systems with ultrafast dynamics. We focus on multichannel homodyne detection as a powerful tool to measure the quantum coherence and the full density matrix of a polariton system. By monitoring the temporal decay of quantum coherence in the polariton condensate, we observe coherence times exceeding the nanosecond scale. Our findings, supported by proof-of-concept experiments and numerical simulations, demonstrate the enhanced resourcefulness of the produced system states for modern quantum protocols. The combination of tailored resource quantifiers and ultrafast spectroscopy techniques presented here paves the way for future applications of quantum information technologies.

8.Detection and modeling of hole capture by single point defects under variable electric fields

Authors:Artur Lozovoi, YunHeng Chen, Gyorgy Vizkelethy, Edward Bielejec, Johannes Flick, Marcus W. Doherty, Carlos A. Meriles

Abstract: Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.

9.Bloch point nanospheres for the design of magnetic traps

Authors:F. Tejo, C. Zambrano-Rabanal, V. Carvalho-Santos, N. Vidal-Silva

Abstract: Through micromagnetic simulations, this work analyzes the stability of Bloch points in magnetic nanospheres and the possibility of using an array of such particles to compose a system with the features of a magnetic trap. We show that a BP can be nucleated as a metastable configuration in a relatively wide range of the nanosphere radius compared to a quasi-uniform and vortex state. We also show that the stabilized Bloch point generates a quadrupolar magnetic field outside it, from which we analyze the field profile of different arrays of these nanospheres to show that the obtained magnetic field shares the features of magnetic traps. Some of the highlights of the proposed magnetic traps rely on the magnetic field gradients achieved, which are orders of magnitude higher than standard magnetic traps, and allow three-dimensional trapping. Our results could be useful in trapping particles through the intrinsic magnetization of ferromagnetic nanoparticles while avoiding the commonly used mechanisms associated with Joule heating.

10.Network plasticity: reduced-order modeling of deformation-driven microstructure evolution

Authors:Daniel Bugas, Brandon Runnels

Abstract: Microstructural evolution in structural materials is known to occur in response to mechanical loading and can often accommodate substantial plastic deformation through the coupled motion of grain boundaries (GBs). This can produce desirable behavior, such as increased ductility, or undesirable behavior such as mechanically-induced coarsening. In this work a novel, multiscale model is developed for capturing the combined effect of plasticity mediated by multiple GBs simultaneously. This model is referred to as "network plasticity" (NP). The mathematical framework of graph theory is used to describe the microstructure connectedness, and the evolution of microstructure is represented as volume flow along the graph. By using the principle of minimum dissipation potential, which has previously been applied to grain boundary migration, a set of evolution equations are developed that transfer volume and eigendeformation along the graph edges in a physically consistent way. It is shown that higher-order geometric effects, such as the pinning effect of triple points, may be accounted for through the incorporation of a geometric hardening that causes geometry-induced GB stagnation. The result is a computationally efficient reduced order model that can be used to simulate the initial motion of grain boundaries in a polycrystal with parameters informed by atomistic simulations. The effectiveness of the model is demonstrated through comparison to multiple bicrystal atomistic simulations, as well as a select number of GB engineered and non-GB engineered data obtained from the literature. The network plastic effect is demonstrated through mechanical response tests and by examining the yield surfaces, and the transition from NP to other, simpler plasticity models is explored.