arXiv daily

Materials Science (cond-mat.mtrl-sci)

Mon, 10 Apr 2023

Other arXiv digests in this category:Thu, 14 Sep 2023; Wed, 13 Sep 2023; Tue, 12 Sep 2023; Mon, 11 Sep 2023; Fri, 08 Sep 2023; Tue, 05 Sep 2023; Fri, 01 Sep 2023; Thu, 31 Aug 2023; Wed, 30 Aug 2023; Tue, 29 Aug 2023; Mon, 28 Aug 2023; Fri, 25 Aug 2023; Thu, 24 Aug 2023; Wed, 23 Aug 2023; Tue, 22 Aug 2023; Mon, 21 Aug 2023; Fri, 18 Aug 2023; Thu, 17 Aug 2023; Wed, 16 Aug 2023; Tue, 15 Aug 2023; Mon, 14 Aug 2023; Fri, 11 Aug 2023; Thu, 10 Aug 2023; Wed, 09 Aug 2023; Tue, 08 Aug 2023; Mon, 07 Aug 2023; Fri, 04 Aug 2023; Thu, 03 Aug 2023; Wed, 02 Aug 2023; Tue, 01 Aug 2023; Mon, 31 Jul 2023; Fri, 28 Jul 2023; Thu, 27 Jul 2023; Wed, 26 Jul 2023; Tue, 25 Jul 2023; Mon, 24 Jul 2023; Fri, 21 Jul 2023; Thu, 20 Jul 2023; Wed, 19 Jul 2023; Tue, 18 Jul 2023; Mon, 17 Jul 2023; Fri, 14 Jul 2023; Thu, 13 Jul 2023; Wed, 12 Jul 2023; Tue, 11 Jul 2023; Mon, 10 Jul 2023; Fri, 07 Jul 2023; Thu, 06 Jul 2023; Wed, 05 Jul 2023; Tue, 04 Jul 2023; Mon, 03 Jul 2023; Fri, 30 Jun 2023; Thu, 29 Jun 2023; Wed, 28 Jun 2023; Tue, 27 Jun 2023; Mon, 26 Jun 2023; Fri, 23 Jun 2023; Thu, 22 Jun 2023; Wed, 21 Jun 2023; Tue, 20 Jun 2023; Fri, 16 Jun 2023; Thu, 15 Jun 2023; Tue, 13 Jun 2023; Mon, 12 Jun 2023; Fri, 09 Jun 2023; Thu, 08 Jun 2023; Wed, 07 Jun 2023; Tue, 06 Jun 2023; Mon, 05 Jun 2023; Fri, 02 Jun 2023; Thu, 01 Jun 2023; Wed, 31 May 2023; Tue, 30 May 2023; Mon, 29 May 2023; Fri, 26 May 2023; Thu, 25 May 2023; Wed, 24 May 2023; Tue, 23 May 2023; Mon, 22 May 2023; Fri, 19 May 2023; Thu, 18 May 2023; Wed, 17 May 2023; Tue, 16 May 2023; Mon, 15 May 2023; Fri, 12 May 2023; Thu, 11 May 2023; Wed, 10 May 2023; Tue, 09 May 2023; Mon, 08 May 2023; Fri, 05 May 2023; Thu, 04 May 2023; Wed, 03 May 2023; Tue, 02 May 2023; Mon, 01 May 2023; Fri, 28 Apr 2023; Thu, 27 Apr 2023; Wed, 26 Apr 2023; Tue, 25 Apr 2023; Mon, 24 Apr 2023; Fri, 21 Apr 2023; Thu, 20 Apr 2023; Wed, 19 Apr 2023; Tue, 18 Apr 2023; Mon, 17 Apr 2023; Fri, 14 Apr 2023; Thu, 13 Apr 2023; Wed, 12 Apr 2023; Tue, 11 Apr 2023
1.Predicted T-XY (X$\neq$Y=P, As and Sb) monolayer with intrinsic persistent spin helix and large piezoelectric response

Authors:San-Dong Guo, Xu-Kun Feng, Dong Huang, Shaobo Chen, Yee Sin Ang

Abstract: The persistent spin helix (PSH) is robust against spin-independent scattering and renders an extremely long spin lifetime, which can improve the performance of potential spintronic devices. To achieve the PSH, a unidirectional spin configuration is required in the momentum space. Here, T-XY (X$\neq$Y=P, As and Sb) monolayers with dynamical, mechanical and thermal stabilities are predicted to intrinsically possess PSH. Due to the $C_{2\upsilon}$ point-group symmetry, a unidirectional spin configuration is preserved in the out-of-plane direction for both conduction and valence bands around the high-symmetry $\Gamma$ point. That is, the expectation value of the spin $S$ only has the out-of-plane component $S_z$. The application of an out-of-plane external electric field can induce in-plane components $S_x$ and $S_y$, thus offering a promising platform for the on-off logical functionality of spin devices. T-XY (X$\neq$Y=P, As and Sb) monolayers are determined to be excellent two-dimensional (2D) piezoelectric materials. The in-plane piezoelectric coefficient $d_{11}$ (absolute value) of T-SbP is 226.15 pm/V, which is larger than that reported for most 2D materials, providing possibility of tuning spin-splitting of PSH by in-plane electric field induced with a uniaxial in-plane strain through piezoelectric effect. Our work reveals a new family of T-phase 2D materials, which could provide promising applications in spintronic and piezoelectric devices.

2.Interaction of in-plane Drude carrier with c-axis phonon in $\rm PdCoO_2$

Authors:Dongmin Seo, Gihyeon Ahn, Gaurab Rimal, Seunghyun Khim, Suk Bum Chung, A. P. Mackenzie, Seongshik Oh, S. J. Moon, Eunjip Choi

Abstract: We performed polarized reflection and transmission measurements on the layered conducting oxide $\rm PdCoO_2$ thin films. For the ab-plane, an optical peak near $\Omega$ $\approx$ 750 cm$^{-1}$ drives the scattering rate $\gamma^{*}(\omega)$ and effective mass $m^{*}(\omega)$ of the Drude carrier to increase and decrease respectively for $\omega$ $\geqq$ $\Omega$. For the c-axis, a longitudinal optical phonon (LO) is present at $\Omega$ as evidenced by a peak in the loss function Im[$-1/\varepsilon_{c}(\omega)$]. Further polarized measurements in different light propagation (q) and electric field (E) configurations indicate that the Peak at $\Omega$ results from an electron-phonon coupling of the ab-plane carrier with the c-LO phonon, which leads to the frequency-dependent $\gamma^{*}(\omega)$ and $m^{*}(\omega)$. This unusual interaction was previously reported in high-temperature superconductors (HTSC) between a non-Drude, mid-infrared band and a c-LO. On the contrary, it is the Drude carrier that couples in $\rm PdCoO_2$. The coupling between the ab-plane Drude carrier and c-LO suggests that the c-LO phonon may play a significant role in the characteristic ab-plane electronic properties of $\rm PdCoO_2$ including the ultra-high dc-conductivity, phonon-drag, and hydrodynamic electron transport.

3.Electrical tuning of robust layered antiferromagnetism in MXene monolayer

Authors:Xinyu Yang, Ning Ding, Jun Chen, Ziwen Wang, Ming An, Shuai Dong

Abstract: A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial antiferromagnetic heterostructures. Here, a robust layered antiferromagnetism with a high N\'eel temperature is predicted in a MXene Cr$_2$CCl$_2$ monolayer, which provides an ideal platform as a magnetoelectric field effect transistor. Based on first-principles calculations, we demonstrate that an electric field can induce the band splitting between spin-up and spin-down channels. Although no net magnetization is generated, the inversion symmetry between the lower Cr layer and the upper Cr layer is broken via electronic cloud distortions. Moreover, this electric field can be replaced by a proximate ferroelectric layer for nonvolatility. The magneto-optic Kerr effect can be used to detect this magnetoelectricity, even if it is a collinear antiferromagnet with zero magnetization.

4.Gas-to-nanotextile: high-performance materials from floating 1D nanoparticles

Authors:Isabel Gómez-Palos, Miguel Vazquez-Pufleau, Richard S Schäufele, Anastasiia Mikhalchan, Afshin Pendashteh, Álvaro Ridruejo, Juan J. Vilatela

Abstract: Suspended in the gas phase, 1D inorganic nanoparticles (nanotubes and nanowires) grow to hundreds of microns in a second and can be thus directly assembled into freestanding network materials. The corresponding process continuously transforms gas precursors into aerosols into aerogels into macroscopic nanotextiles. By enabling the assembly of very high aspect ratio nanoparticles, this processing route has translated into high-performance structural materials, transparent conductors and battery anodes, amongst other embodiments. This paper reviews progress in the application of such manufacturing process to nanotubes and nanowires. It analyses 1D nanoparticle growth through floating catalyst chemical vapour deposition (FCCVD), in terms of reaction selectivity, scalability and its inherently ultra-fast growth rates (107-108 atoms per second) up to 1000 times faster than for substrate CVD. We summarise emerging descriptions of the formation of aerogels through percolation theory and multi-scale models for the collision and aggregation of 1D nanoparticles. The paper shows that macroscopic ensembles of 1D nanoparticles resemble textiles in their porous network structure, high flexibility and damage-tolerance. Their bulk properties depend strongly on inter-particle properties and are dominated by alignment and volume fraction. Selected examples of nanotextiles that surpass granular and monolithic materials include structural fibres with polymer-like toughness, transparent conductors, and slurry-free composite electrodes for energy storage.

5.Recipe for single-pair-Weyl-points phonons carrying the same chiral charges

Authors:Guangqian Ding, Chengwu Xie, Jingbo Bai, Zhenxiang Cheng, Xiaotian Wang, Weikang Wu

Abstract: Recently, Wang et al. [Phys. Rev. B, 106, 195129 (2022)] challenged a widely held belief in the field of Weyl physics, demonstrating that single-pair-Weyl-points (SP-WPs) can exist in nonmagnetic spinless systems, contrary to previous assumptions that they could only exist in magnetic systems. Wang et al. observed that the SP-WPs with opposite and even chiral charges (i.e., |C| = 2 or 4) could also exist in nonmagnetic spinless systems. In this Letter, we present a novel finding in which SP-WPs have a partner, namely a charged nodal surface, in nonmagnetic spinless systems. In contrast to previous observations, we show that the SP-WPs can have uneven chiral charges (i.e., |C| = 1). We identify 6 (out of 230) space groups (SGs) that contain such SP-WPs by searching the encyclopedia of emergent particles in three-dimensional crystals. Our finds were confirmed through the phonon spectra of two specific materials Zr3O (with SG 182) and NaPH2NO3 (with SG 173). This discovery broadens the range of materials that can host SP-WPs and applies to other nonmagnetic spinless crystals.

6.Dynamic Local Structure in Caesium Lead Iodide: Spatial Correlation and Transient Domains

Authors:William Baldwin, Xia Liang, Johan Klarbring, Milos Dubajic, David Dell'Angelo, Christopher Sutton, Claudia Caddeo, Samuel D. Stranks, Alessandro Mattoni, Aron Walsh, Gábor Csányi

Abstract: Metal halide perovskites are multifunctional semiconductors with tunable structures and properties. They are highly dynamic crystals with complex octahedral tilting patterns and strongly anharmonic atomic behaviour. In the higher temperature, higher symmetry phases of these materials, several complex structural features have been observed. The local structure can differ greatly from the average structure and there is evidence that dynamic two-dimensional structures of correlated octahedral motion form. An understanding of the underlying complex atomistic dynamics is, however, still lacking. In this work, the local structure of the inorganic perovskite CsPbI$_3$ is investigated using a new machine learning force field based on the atomic cluster expansion framework. Through analysis of the temporal and spatial correlation observed during large-scale simulations, we reveal that the low frequency motion of octahedral tilts implies a double-well effective potential landscape, even well into the cubic phase. Moreover, dynamic local regions of lower symmetry are present within both higher symmetry phases. These regions are planar and we report the length and timescales of the motion. Finally, we investigate and visualise the spatial arrangement of these features and their interactions, providing a comprehensive picture of local structure in the higher symmetry phases.

7.Low-Frequency Electronic Noise in the Aluminum Gallium Oxide Schottky Barrier Diodes

Authors:Subhajit Ghosh, Dinusha Herath Mudiyanselage, Sergey Rumyantsev, Yuji Zhao, Houqiang Fu, Stephen Goodnick, Robert Nemanich, Alexander A. Balandin

Abstract: We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-12}$ cm$^2$/Hz (f=10 Hz) at 1 A/cm$^2$ current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier, and correspondingly, impact the electric current. The obtained results help to understand noise in Schottky barrier diodes made of ultra-wide-band-gap semiconductors and can be used for the material and device quality assessment.

8.A data-driven framework for structure-property correlation in ordered and disordered cellular metamaterials

Authors:Shengzhi Luan, Enze Chen, Joel John, Stavros Gaitanaros

Abstract: Cellular solids and micro-lattices are a class of lightweight architected materials that have been established for their unique mechanical, thermal, and acoustic properties. It has been shown that by tuning material architecture, a combination of topology and solid(s) distribution, one can design new material systems, also known as metamaterials, with superior performance compared to conventional monolithic solids. Despite the continuously growing complexity of synthesized microstructures, mainly enabled by developments in additive manufacturing, correlating their morphological characteristics to the resulting material properties has not advanced equally. This work aims to develop a systematic data-driven framework that is capable of identifying all key microstructural characteristics and evaluating their effect on a target material property. The framework relies on integrating virtual structure generation and quantification algorithms with interpretable surrogate models. The effectiveness of the proposed approach is demonstrated by analyzing the effective stiffness of a broad class of two-dimensional (2D) cellular metamaterials with varying topological disorder. The results reveal the complex manner in which well-known stiffness contributors, including nodal connectivity, cooperate with often-overlooked microstructural features such as strut orientation, to determine macroscopic material behavior. We further re-examine Maxwell's criteria regarding the rigidity of frame structures, as they pertain to the effective stiffness of cellular solids and showcase microstructures that violate them. This framework can be used for structure-property correlation in different classes of metamaterials as well as the discovery of novel architectures with tailored combinations of material properties.

9.Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

Authors:José Menéndez, Chi Xu, John Kouvetakis

Abstract: A consistent methodology is presented to extract carrier concentrations in n-type Ge from measurements of the infrared dielectric function and the Hall effect. In the case of the optical measurements, usually carried out using spectroscopic ellipsometry, the carrier concentration is affected by the doping dependence of the conductivity effective mass, which is computed using a model of the electronic density of states that accounts for non-parabolicity and is fit to electronic structure calculations. Carrier concentrations obtained from Hall measurements require a knowledge of the Hall factor, which is arbitrarily set equal to unit in most practical applications. We have calculated the Hall factor for n-Ge using a model that accounts for scattering with phonons and with ionized impurities. We show that determinations of the carrier concentration n using our computed effective mass and Hall factor virtually eliminates any systematic discrepancy between the two types of measurement. We then use these results to compute majority carrier mobilities from measured resistivity values, to compare with measurements of minority carrier mobilities, and to fit empirical expressions to the doping dependence of the mobilities that can be used to model Ge devices.

10.Model-free characterization of topological edge and corner states in mechanical networks

Authors:Marcelo Guzman, Xiaofei Guo, Corentin Coulais, David Carpentier, Denis Bartolo

Abstract: Topological materials can host edge and corner states that are protected from disorder and material imperfections. In particular, the topological edge states of mechanical structures present unmatched opportunities for achieving robust responses in wave guiding, sensing, computation, and filtering. However, determining whether a mechanical structure is topologically nontrivial and features topologically-protected modes has hitherto relied on theoretical models. This strong requirement has limited the experimental and practical significance of topological mechanics to laboratory demonstrations. Here, we introduce and validate an experimental method to detect the topologically protected zero modes of mechanical structures without resorting to any modeling step. Our practical method is based on a simple electrostatic analogy: topological zero modes are akin to electric charges. To detect them, we identify elementary mechanical molecules and measure their chiral polarization, a recently introduced marker of topology in chiral phases. Topological zero modes are then identified as singularities of the polarization field. Our method readily applies to any mechanical structure and effectively detects the edge and corner states of regular and higher-order topological insulators. Our findings extend the reach of chiral topological phases beyond designer materials, and allow their direct experimental investigation.

11.Spin-phonon interactions and magnetoelectric coupling in Co$_4$$B_2$O$_9$ ($B$ = Nb, Ta)

Authors:K. Park, J. Kim, S. Choi, S. Fan, C. Kim, D. G. Oh, N. Lee, S. -W. Cheong, V. Kiryukhin, Y. J. Choi, D. Vanderbilt, J. H. Lee, J. L. Musfeldt

Abstract: In order to explore the consequences of spin-orbit coupling on spin-phonon interactions in a set of chemically-similar mixed metal oxides, we measured the infrared vibrational properties of Co$_4B_2$O$_9$ ($B$ = Nb, Ta) as a function of temperature and compared our findings with lattice dynamics calculations and several different models of spin-phonon coupling. Frequency vs. temperature trends for the Co$^{2+}$ shearing mode near 150 cm$^{-1}$ reveal significant shifts across the magnetic ordering temperature that are especially large in relative terms. Bringing these results together and accounting for noncollinearity, we obtain spin-phonon coupling constants of -3.4 and -4.3 cm$^{-1}$ for Co$_4$Nb$_2$O$_9$ and the Ta analog, respectively. Analysis reveals that these coupling constants derive from interlayer (rather than intralayer) exchange interactions and that the interlayer interactions contain competing antiferromagnetic and ferromagnetic contributions. At the same time, beyond-Heisenberg terms are minimized due to fortuitous symmetry considerations, different than most other 4$d$- and 5$d$-containing oxides. Comparison with other contemporary oxides shows that spin-phonon coupling in this family of materials is among the strongest ever reported, suggesting an origin for magnetoelectric coupling.