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Materials Science (cond-mat.mtrl-sci)

Fri, 14 Jul 2023

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1.Giant geometry modulation on magnetic proximity effect observed in isomeric oxide heterostructures

Authors:Meng Wang, Shunsuke Mori, Xiuzhen Yu, Masahiro Sawada, Ryutaro Yoshimi, Naoya Kanazawa, Fumitaka Kagawa

Abstract: Magnetic proximity effect (MPE) is generally considered to occur at the magnetic-nonmagnetic material interface within a short-range space domain, while the structural geometry modulation on such an interface effect has not been explored. Here, we fabricate isomeric paramagnetic metallic IrO2 with rutile and anatase structures, respectively, on a ferrimagnetic insulating CoFe2O4, and study the MPE-induced magnetism by anomalous Hall effect (AHE) measurements. The rutile phase with layered structure shows a conventional AHE and identical coercive-field with CoFe2O4, indicating a concomitant magnetic switching as a result of a strong magnetic coupling at the interface. In contrast, the anatase phase with tetrahedral structure exhibits an unconventional AHE with negative coercive-field at low temperatures. Further analyses indicate that in anatase, the contribution that strongly couples with CoFe2O4 is dramatically suppressed while a giant frustration-like response emerges. Our findings reveal that the MPE-induced spin orders can be pronouncedly modulated by structural geometry.

2.Electrical polarization switching in bulk single crystal GaFeO$_{3}$

Authors:Maria Biernacka, Paweł Butkiewicz, Konrad J. Kapcia, Wojciech Olszewski, Dariusz Satuła, Marek Szafrański, Marcin Wojtyniak, Krzysztof Szymański

Abstract: The electrical polarization switching on stoichiometric GaFeO$_{3}$ single crystal was measured, and a new model of atomic displacements responsible for the polarization reverse was proposed. The widely adapted mechanism of polarization switching in GaFeO$_{3}$ can be applied to stoichiometric, perfectly ordered crystals. However, the grown single crystals, as well as thin films of Ga-Fe-O, show pronounced atomic disorder. By piezoresponse force microscopy, the electrical polarization switching on a crystal surface perpendicular to the electrical polarization direction was demonstrated. Atomic disorder in the crystal was measured by X-ray diffraction and M\"ossbauer spectroscopy. These measurements were supported by ab initio calculations. By analysis of atomic disorder and electronic structure calculations, the energies of defects of cations in foreign cationic sites were estimated. The energies of the polarization switch were estimated, confirming the proposed mechanism of polarization switching in GaFeO$_{3}$ single crystals.

3.Frustration-induced magnetic bimerons in transition metal halide CoX2 (X = Cl, Br) monolayers

Authors:Yu Wang, Shuai Dong, Xiaoyan Yao

Abstract: With the field of two-dimensional (2D) magnetic materials expanding rapidly, noncollinear topological magnetic textures in 2D materials are attracting growing interest recently. As the in-plane counterpart of magnetic skyrmions, magnetic bimerons have the same topological advantages, but are rarely observed in experiments. Employing first-principles calculations and Monte Carlo simulations, we predict that the centrosymmetric transition metal halide CoX2 (X = Cl, Br) monolayers can be promising candidates for observing the frustration-induced bimerons. These bimerons crystallize into stable triangular lattice under an appropriate magnetic field. Compared to the skyrmions driven by the Dzyaloshinskii-Moriya interaction or the long-ranged magnetic dipole-dipole interactions, these frustration-induced bimerons have much smaller size and flexible tunability. Furthermore, the biaxial strain provides an effective method to tune the frustration and thereby to tune the bimeron lattice. In detail, for CoCl2 monolayer, tensile strain can be applied to generate bimeron lattice, further shrink bimeron size and increase the density of bimerons. For CoBr2 monolayer with inherent bimeron lattice state, a unique orientation rotation of bimeron lattice controlled by compressive strain is predicted.