Materials Science (cond-mat.mtrl-sci)

Abstract: Applying a magnetic field to a solid changes its thermal-transport properties. Although such magneto-thermal-transport phenomena are usually small effects, giant magneto-thermal resistance has recently been observed in spintronic materials1,2 and superconductors3,4, opening up new possibilities in thermal management technologies. However, the thermal conductivity conventionally changes only when a magnetic field is applied due to the absence of nonvolatility, which limits potential applications of thermal switching devices5,6. Here, we report the observation of nonvolatile thermal switching that changes the thermal conductivity when a magnetic field is applied and retains the value even when the field is turned off. This unconventional magneto-thermal switching, surprisingly, arises in commercial Sn-Pb solders and is realized by phase-separated superconducting states and resultant nonuniform magnetic flux distributions. This result confirms the versatility of the observed phenomenon and aids the development of active solid-state thermal management devices.

Abstract: Anomalous Hall effect (AHE) emerged in antiferromagnetic metals shows intriguing physics and application potential. In contrast to certain noncollinear antiferromagnets, rutile RuO$_2$ has been proposed recently to exhibit a crystal-assisted AHE with collinear antiferromagnetism. However, in RuO$_2$, the on-site magnetic moment accompanying itinerant 4d electrons is quite small, and more importantly, the AHE at zero external field is prohibited by symmetry because of the high-symmetry [001] direction of the N\'eel vector. Here, we show the AHE at zero field in the collinear antiferromagnet, Cr-doped RuO$_2$. The appropriate doping of Cr at Ru sites results in a rotation of the N\'eel vector from [001] to [110] and enhancement of the on-site magnetic moment by one order of magnitude while maintaining a metallic state with the collinear antiferromagnetism. The AHE with vanishing net moment in the Ru$_{0.8}$Cr$_{0.2}$O$_2$ exhibits an orientation dependence consistent with the [110]-oriented N\'eel vector. These results open a new avenue to manipulate AHE in antiferromagnetic metals.

Abstract: Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single junction devices, such a device has never been demonstrated. In this study, we present the first monolithically integrated selenium/silicon tandem solar cell. Guided by device simulations, we investigate various carrier-selective contact materials and achieve encouraging results, including an open-circuit voltage of V$_\text{oc}$=1.68 V from suns-V$_\text{oc}$ measurements. The high open-circuit voltage positions selenium/silicon tandem solar cells as serious contenders to the industrially dominant single junction technologies. Furthermore, we quantify a pseudo fill factor of more than 80% using injection-level-dependent open-circuit voltage measurements, indicating that a significant fraction of the photovoltaic losses can be attributed to parasitic series resistance. This work provides valuable insights into the key challenges that need to be addressed for realizing higher efficiency selenium/silicon tandem solar cells.

Abstract: Flat electronic bands near the Fermi level provide a fertile playground for realizing interaction-driven correlated physics. To date, related experiments have mostly been limited to engineered multilayer systems (e.g., moir\'e systems). Herein, we report an experimental realization of nearly flat bands across the Fermi level in monolayer MoTe2-x by fabricating a uniformly ordered mirror-twin boundary superlattice (corresponding to a stoichiometry of MoTe56/33). The kagome flat bands are discovered by combining scanning tunnelling microscopy and theoretical calculations. The partial filling nature of flat bands yields a correlated insulating state exhibiting a hard gap as large as 15 meV. Moreover, we observe pronounced responses of the correlated states to magnetic fields, providing evidence for a spin-polarized ground state. Our work introduces a monolayer platform that manifests strong correlation effects arising from flattened electronic bands.

Abstract: This study investigates the temperature-dependent quasi-static magnetoelectric (ME) response of electrically poled lead-free Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$-NiFe$_2$O$_4$ (NKBT-NFO) laminated composites. The aim is to understand the temperature stability of ME-based sensors and devices. The relaxor ferroelectric nature of NKBT is confirmed through impedance and polarization-electric (PE) hysteresis loop studies, with a depolarization temperature (Td) of approximately 110$^\circ$C. Heating causes a decrease and disappearance of planar electromechanical coupling, charge coefficient, and remnant polarization above Td. The temperature rise also leads to a reduction in magnetostriction and magnetostriction coefficient of NFO by approximately 33% and 25%, respectively, up to approximately 125$^\circ$C. At room temperature, the bilayer and trilayer configurations exhibit maximum ME responses of approximately 33 mV/cm.Oe and 80 mV/cm.Oe, respectively, under low magnetic field conditions (300-450 Oe). The ME response of NKBT/NFO is highly sensitive to temperature, decreasing with heating in accordance with the individual temperature-dependent properties of NKBT and NFO. This study demonstrates a temperature window for the effective utilization of NKBT-NFO-based laminated composite ME devices.

Abstract: With its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin-orbit coupling of 5d transition metals have emerged. Here, we demonstrate non-volatile electrical control of the proximity induced magnetism in SrIrO3 based back-gated heterostructures. We report up to a 700 % variation of the anomalous Hall conductivity {\sigma}_AHE and Hall angle {\theta}_AHE as function of the applied gate voltage Vg. In contrast, the Curie temperature TC = 100K and magnetic anisotropy of the system remain essentially unaffected by Vg indicating a robust ferromagnetic state in SrIrO3 which strongly hints to gating-induced changes of the anomalous Berry curvature. The electric-field induced ferroelectric-like state of SrTiO3 enables non-volatile switching behavior of {\sigma}_AHE and {\theta}_AHE below 60 K. The large tunability of this system, opens new avenues towards efficient electric-field manipulation of magnetism.

Abstract: High quality scanning transmission electron microscopy (STEM) data acquisition and analysis has become increasingly important due to the commercial demand for investigating the properties of complex materials such as battery cathodes; however, multidimensional techniques (such as 4-D STEM) which can improve resolution and sample information are ultimately limited by the beam-damage properties of the materials or the signal-to-noise ratio of the result. subsampling offers a solution to this problem by retaining high signal, but distributing the dose across the sample such that the damage can be reduced. It is for these reasons that we propose a method of subsampling for 4-D STEM, which can take advantage of the redundancy within said data to recover functionally identical results to the ground truth. We apply these ideas to a simulated 4-D STEM data set of a LiMnO2 sample and we obtained high quality reconstruction of phase images using 12.5% subsampling.

Abstract: Recent experimental reports on the realizations of two-dimensional (2D) networks of the C60-based fullerenes with anisotropic and nanoporous lattices represent a significant advance, and create exciting prospects for the development of a new class of nanomaterials. In this work, we employed theoretical calculations to explore novel C60-based fullerene lattices and subsequently evaluate their stability and key physical properties. After the energy minimization of extensive structures, we could detect novel 2D, 1D and porous carbon C60-based networks, with close energies to that of the isolated C60 cage. Density functional theory results confirm that the C60-based networks can exhibit remarkable thermal stability, and depending on their atomic structure show metallic, semimetallic or semiconducting electronic nature. Using the machine learning interatomic potentials, thermal and mechanical responses of the predicted nanoporous 2D lattices were investigated. The estimated thermal conductivity of the quasi-hexagonal-phase of C60 fullerene is shown to be in an excellent agreement with the experimental measurements. Despite of different atomic structures, the anisotropic room temperature lattice thermal conductivity of the fullerene nanosheets are estimated to be in the order of 10 W/mK. Unlike the majority of carbon-based 2D materials, C60-based counterparts noticeably are predicted to show positive thermal expansion coefficients. Porous carbon C60-based networks are found to exhibit superior mechanical properties, with tensile strengths and elastic modulus reaching extraordinary values of 50 and 300 GPa, respectively. The theoretical results presented in this work provide a comprehensive vision on the structural, energetic, electronic, thermal and mechanical properties of the C60-based fullerene networks.

Abstract: Kagome metals are topological materials with a rich phase diagram featuring various charge density wave orders and even unconventional superconductivity. However, little is still known about possible spin-polarized responses in these non-magnetic compounds. Here, we perform ab-initio calculations of the intrinsic spin Hall effect (SHE) in the kagome metals AV$_3$Sb$_5$ (A=Cs, Rb, K), CsTi$_3$Bi$_5$ and ScV$_6$Sn$_6$. We report large spin Hall conductivities, comparable with the Weyl semimetal TaAs. Additionally, in CsV$_3$Sb$_5$ the SHE is strongly renormalized by the CDW order. We can understand these results based on the topological properties of band structures, demonstrating that the SHE is dominated by the position and shape of the Dirac nodal lines in the kagome sublattice. Our results suggest kagome materials as a promising, tunable platform for future spintronics applications.

Abstract: Provided is a comprehensive description of a band gap thermodynamic model, which predicts and explains key features of photosegregation in lead-based, mixed-halide perovskites. The model provides a prescription for illustrating halide migration driven by photocarrier energies. Where possible, model predictions are compared to experimental results. Free energy derivations are provided for three assumptions: (1) halide mixing in the dark, (2) a fixed number of photogenerated carriers funneling to and localizing in low band gap inclusions of the alloy, and (3) the statistical occupancy of said inclusions from a bath of thermalized photocarriers in the parent material. Model predictions include: excitation intensity ($I_{\textrm{exc}}$)-dependent terminal halide stoichiometries ($x_{\textrm{terminal}}$), excitation intensity thresholds ($I_{\textrm{exc,threshold}}$) below which photosegregation is suppressed, reduced segregation in nanocrystals as compared to thin films, the possibility to kinetically manipulate photosegregation rates via control of underlying mediators, asymmetries in forward and reverse photosegregation rate constants/activation energies, and a preference for high band gap products to recombine with the parent phase. What emerges is a cohesive framework for understanding ubiquitous photosegregation in mixed-halide perovskites and a rational basis by which to manage the phenomenon.

Abstract: We present high field magnetotransport studies of Ge1-x-y(SnxMny)Te bulk multiferroics with diamagnetic Sn and paramagnetic Mn concentration x = 0.38 to 0.79 and y = 0.02 to 0.086, respectively. The zero field resistivity, {\rho}(T) takes significant contribution from defects below T = 20 K however, a mixed scattering contribution from dynamic disorder and unusual sources is estimated from T = 20 K to 300 K. The carrier mobility shows anomalous temperature dependence from T0.2 to T0.5 which hints towards possible presence of polaronic effects resulting from coupling of holes with phonons. This anomalous behavior cannot be understood in terms of pure phononic scattering mechanism at high temperature. From point of view of high field results, the transverse component of magnetoresistivity manifests anomalous Hall effect originating from extrinsic scattering sources, particularly the side jump mechanism reveals a larger contribution. We also find that the correlation between the transverse and longitudinal conductivities follow the universal scaling law {\sigma}xy ~ {\sigma}xxn where n = 1.6 in the low conductivity limit. The values n = 1.5 to 1.8 obtained for the present GSMT alloys justify the bad metal hopping regime since the results fall in the low conductivity ferromagnetic family with {\sigma}xx ~ 104 ohmcm-1. The interpretation of the n = 1.6 scaling in the low conductivity regime is thus far not fully understood. However, the anomalous Hall resistivity scaling with modified relation by Tian et al is indicative of the dominant side jump scattering along with noticeable role of skew scattering.