Materials Science (cond-mat.mtrl-sci)

Abstract: Angle-resolved spin-torque ferromagnetic resonance measurements are carried out in heterostructures consisting of Py (Ni$_{81}$Fe$_{19}$) and a noncollinear antiferromagnetic quantum material $\gamma-$IrMn$_{3}$. The structural characterization reveals that $\gamma-$IrMn$_{3}$ is polycrystalline in nature. A large exchange bias of 158~Oe is found in Py/$\gamma-$IrMn$_{3}$ at room temperature, while $\gamma-$IrMn$_{3}$/Py and Py/Cu/$\gamma-$IrMn$_{3}$ exhibited no exchange bias. Regardless of the exchange bias and stacking sequence, we observe a substantial unconventional out-of-plane anti-damping torque when $\gamma-$IrMn$_{3}$ is in direct contact with Py. The magnitude of the out-of-plane spin-orbit torque efficiency is found to be twice as large as the in-plane spin-orbit torque efficiency. The unconventional spin-orbit torque vanishes when a Cu spacer is introduced between Py and $\gamma-$IrMn$_{3}$, indicating that the unconventional spin-orbit torque in this system originates at the interface. These findings are important for realizing efficient antiferromagnet-based spintronic devices via interfacial engineering.

Abstract: Compounds with kagome lattice structure are known to exhibit Dirac cones, flat bands, and van Hove singularities, which host a number of versatile quantum phenomena, including an unusual anomalous Hall conductivity (AHC) in Co3Sn2S2 and AV3Sb5. Inspired by the intriguing properties of these compounds, we investigate the temperature-dependent electromagnetic properties of ScV6Sn6, a non-magnetic charge density wave (CDW) compound. We found AHC of the order of 104 with a 20 % of anomalous Hall angle, which are fully consistent with the CDW phase and disappear above the CDW transition. Moreover, only the topological Fermi surfaces containing cone and van Hove singularity are typically active and exhibit the Shubnikov de-Haas oscillations, contrary to those displayed by AV3Sb5, with an average of 70-fold increase in the momentum conserving time in the CDW phase. Combining these interesting physical properties with the CDW phase, ScV6Sn6 presents a unique material example of the versatile HfFe6Ge6 family and provides various promising opportunities to explore the series further.

Abstract: This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (IDS, MAX) of 160 mA/mm and transconductance (gm) around 36 mS/mm was measured at VDS= 10 V for LSD= 1.5 micrometer channel length. Transconductance is limited by higher channel sheet resistance (Rsheet). We observed no current collapse for both drain and gate lag measurement even at higher VDG,Q quiescent bias points. This is the first report of Ga2O3 FET showing no current collapse without any external passivation. Breakdown voltage around 125 V was reported for LGD= 1.2 micrometer. We extracted 27 GHz current gain cut off frequency (fT) and 100 GHz fMAX for 20 V drain bias. fMAX value mentioned here is the highest for Ga2O3 and the first demonstration of 100 GHz operation. fT. VBR product of 3.375 THz.V has been calculated which is comparable with state-of-art GaN HEMT. This letter suggests that Ga2O3 can be a suitable candidate for X-band application.

Abstract: Charge transfer in type-II heterostructures plays important roles in determining device performance for photovoltaic and photocatalytic applications. However, current theoretical studies of charge transfer process don't consider the effects of operating conditions such as illuminations and yield systemically larger interlayer transfer time of hot electrons in MoS2/WS2 compared to experimental results. Here in this work, we propose a general picture that, illumination can induce interfacial dipoles in type-II heterostructures, which can accelerate hot carrier transfer by reducing the energy difference between the electronic states in separate materials and enhancing the nonadiabatic couplings. Using the first-principles calculations and the ab-initio nonadiabatic molecular dynamics, we demonstrate this picture using MoS2/WS2 as a prototype. The calculated characteristic time for the interlayer transfer (60 fs) and the overall relaxation (700 fs) processes of hot electrons is in good agreement with the experiments. We further find that illumination mainly affects the ultrafast interlayer transfer process but has little effects on the relatively slow intralayer relaxation process. Therefore, the overall relaxation process of hot electrons has a saturated time with increased illumination strengths. The illumination-accelerated charge transfer is expected to universally exist in type-II heterostructures.

Abstract: Single-crystal growth, magnetic properties, and magnetocaloric effect of the $S = 3/2$ kagome ferromagnet Li$_9$Cr$_3$(P$_2$O$_7$)$_3$(PO$_4$)$_2$ (trigonal, space group: $P\bar{3}c1$) are reported. Magnetization data suggest dominant ferromagnetic intra-plane coupling with a weak anisotropy and the onset of ferromagnetic ordering at $T_{\rm C} \simeq 2.6$ K. Microscopic analysis reveals a very small ratio of interlayer to intralayer ferromagnetic couplings ($J_{\perp}/J \simeq 0.02$). Electron spin resonance data suggest the presence of short-range correlations above $T_{\rm C}$ and confirms quasi-two-dimensional character of the spin system. A large magnetocaloric effect characterized by isothermal entropy change of $-\Delta S_{\rm m}\simeq 31$ J kg$^{-1}$ K$^{-1}$ and adiabatic temperature change of $-\Delta T_{\rm ad}\simeq 9$ K upon a field sweep of 7 T is observed around $T_{\rm C}$. This leads to a large relative cooling power of $RCP \simeq 284$ J kg$^{-1}$. The large magnetocaloric effect, together with negligible hysteresis render Li$_9$Cr$_3$(P$_2$O$_7$)$_3$(PO$_4$)$_2$ a promising material for magnetic refrigeration at low temperatures. The magnetocrystalline anisotropy constant $K \simeq -7.42 \times 10^4$ erg cm$^{-3}$ implies that the compound is an easy-plane type ferromagnet with the hard axis normal to the $ab$-plane, consistent with the magnetization data.

Abstract: Electrochemical Impedance Spectroscopy (EIS) is a powerful tool for electrochemical analysis; however, its data can be challenging to interpret. Here, we introduce a new open-source tool named AutoEIS that assists EIS analysis by automatically proposing statistically plausible equivalent circuit models (ECMs). AutoEIS does this without requiring an exhaustive mechanistic understanding of the electrochemical systems. We demonstrate the generalizability of AutoEIS by using it to analyze EIS datasets from three distinct electrochemical systems, including thin-film oxygen evolution reaction (OER) electrocatalysis, corrosion of self-healing multi-principal components alloys, and a carbon dioxide reduction electrolyzer device. In each case, AutoEIS identified competitive or in some cases superior ECMs to those recommended by experts and provided statistical indicators of the preferred solution. The results demonstrated AutoEIS's capability to facilitate EIS analysis without expert labels while diminishing user bias in a high-throughput manner. AutoEIS provides a generalized automated approach to facilitate EIS analysis spanning a broad suite of electrochemical applications with minimal prior knowledge of the system required. This tool holds great potential in improving the efficiency, accuracy, and ease of EIS analysis and thus creates an avenue to the widespread use of EIS in accelerating the development of new electrochemical materials and devices.